A first principles study of the interaction between two-dimensional black phosphorus and Al2O3dielectric

Jie Sun,Na Lin,Cheng Tang,Hao Ren,Xian Zhao

DOI: https://doi.org/10.1039/c6ra27271a

IF: 4.036

2017-01-01

RSC Advances

Abstract:First principles calculations have been performed to study the structural, energetic, and electronic properties of BP on Al-terminated and hydroxylated Al2O3(0001) surfaces.

What problem does this paper attempt to address?

A First Principles Study of the Interaction Between Two-Dimensional Black Phosphorus and Al2O3dielectric

Jie Sun,Na Lin,Cheng Tang,Hao Ren,Xian Zhao

DOI: https://doi.org/10.1039/c6ra27271a

IF: 4.036

2017-01-01

RSC Advances

Abstract:The chemical degradation of exfoliated black phosphorus (BP) when exposed to ambient conditions can be effectively suppressed via the deposition of Al2O3 dielectric on the BP surface. A good understanding of the interactions between the BP layer and Al2O3 dielectric is important for practical device applications. In the presented paper, first principles calculations have been performed to study the structural, energetic, and electronic properties of BP on an Al-terminated and hydroxylated Al2O3 (0001) surface. Our calculations indicate the band gap of monolayer BP is enlarged by about 160 meV and 92 meV after the deposition respectively of an Al-terminated and hydroxylated Al2O3 surface, which is mainly due to interlayer charge transfer between the BP and Al2O3 surfaces. However, this trend for increasing band gap is inverted upon increasing the number of BP layers. Besides, the valence-band offset of a few-layer (2–4 layer) BP/ Al2O3 system is about 0.5–0.9 eV larger than that of a monolayer BP/Al2O3 system, which is more suitable for creating an injection barrier. Moreover, the band gaps of BP/Al2O3 systems could be tuned using an external electric field for practical applications.
Dielectric Material for Monolayer Black Phosphorus Transistors: A First-Principles Investigation

Qing Shi,Hong Guo,Fei Liu

DOI: https://doi.org/10.1109/sispad.2015.7292257

2015-01-01

Abstract:Using advanced parameter-free first-principles calculations, we suggested that corundum (a-Al 2 O 3 ) is a promising candidate of the dielectric materials for monolayer black-phosphorus (BP). Hydrogen passivated Al 2 O 3 is preferred to avoid metallization with monolayer BP. Clean interface is found between monolayer BP and H-terminated Al 2 O 3 . The valence-band offset for these systems is around 0.9eV, which is appropriate to create a reasonable carrier injection barrier. Moreover, orientation effect is found to be of great significance for these systems. Special orientation can generate an indirect band gap for monolayer BP.
First-principles Study on the Properties of GPBII(Al2CuMg)(001)and S(Al2CuMg)(001) Surfaces

Yang Liu,Yan-Hui Hou,Bo-Si Li,Bao-Shu Qian,Liang Min

DOI: https://doi.org/10.2991/ame-17.2017.9

2017-01-01

Abstract:Surface structure and electronic properties of (001) surfaces of GPBII and Sphase were studied by using first-principles calculations. The calculations are performed within the density functional framework using the projector augmented plane wave (PAW) method. For different terminations of GPBII and S, the results in the GGA-PW91 and GGA-PBE almost give the same description for relaxation of different layers, and the relaxation results in GGA-PW91 and GGA-PBE are more reliable in this calculation as compared with LDA. As compared the Total DOS of GPBII-Al(Cu)(001) termination surface and S-Al(Al)(001) termination surface, there are apparent differences on the height of main peak and the band district of the peak of density of states. The interaction of atoms in S-Al(Al)(001) termination surface is stronger than that of GPBII-Al(Cu)(001) termination surface.
O ct 2 01 8 Thermal transport properties of single-layer black phosphorous from extensive molecular dynamics simulations

Ke Xu,Zheyong Fan,Jicheng Zhang,Ning Wei,Tapio Ala-Nissila

2018-01-01

Abstract:Ke Xu, Zheyong Fan, 3, ∗ Jicheng Zhang, Ning Wei, † and Tapio Ala-Nissila 4 College of Water Resources and Architectural Engineering, Northwest A&F University, 712100 Yangling, China School of Mathematics and Physics, Bohai University, Jinzhou, China QTF Centre of Excellence, Department of Applied Physics, Aalto University, FI-00076 Aalto, Finland Center for Interdisciplinary Mathematical Modeling and Department of Mathematical Sciences, Loughborough University, Loughborough, Leicestershire LE11 3TU, UK (Dated: October 19, 2018)
Surface Chemistry of Black Phosphorus under a Controlled Oxidative Environment

Wei Luo,Dmitry Y. Zemlyanov,Cory A. Milligan,Yuchen Du,Lingming Yang,Yanqing Wu,Peide D. Ye

DOI: https://doi.org/10.1088/0957-4484/27/43/434002

IF: 3.5

2016-01-01

Nanotechnology

Abstract:Black phosphorus (BP), the bulk counterpart of monolayer phosphorene, is a relatively stable phosphorus allotrope at room temperature. However, monolayer phosphorene and ultra-thin BP layers degrade in ambient atmosphere. In this paper, we report the investigation of BP oxidation and discuss the reaction mechanism based on the x-ray photoelectron spectroscopy (XPS) data. The kinetics of BP oxidation was examined under various well-controlled conditions, namely in 5% O2/Ar, 2.3% H2O/Ar, and 5% O2 and 2.3% H2O/Ar. At room temperature, the BP surface is demonstrated not to be oxidized at a high oxidation rate in 5% O2/Ar nor in 2.3% H2O/Ar, according to XPS, with the thickness of the oxidized phosphorus layer <5 Å for 5 h. On the other hand, in the O2/H2O mixture, a 30 Å thickness oxide layer was detected already after 2 h of the treatment. This result points to a synergetic effect of water and oxygen in the BP oxidation. The oxidation effect was also studied in applications to the electrical measurements of BP field-effect transistors (FETs) with or without passivation. The electrical performance of BP FETs with atomic layer deposition (ALD) dielectric passivation or h-BN passivation formed in a glove-box environment are also presented.
Band-edge Engineering Via Molecule Intercalation: a New Strategy to Improve Stability of Few-Layer Black Phosphorus

Qionghua Zhou,Qiang Li,Shijun Yuan,Qian Chen,Jinlan Wang

DOI: https://doi.org/10.1039/c7cp05730j

2017-01-01

Abstract:The poor environmental stability of black phosphorous (BP) seriously limits its practical applications in (opto)electronics. Other than capping protective layers on its surface, herein we propose a new strategy to improve BP's ambient stability by engineering the interlayer interactions. Our first-principles calculations demonstrate that enlarging the interlayer spacing can effectively shift the conduction band minimum down to suppress the generation of superoxide and the enlargement can be achieved by intercalating small molecules like H-2 and He into BP. Moreover, the molecule intercalated BP maintains high hole mobility, which makes it a better two-dimensional semiconductor for practical applications.
Surface passivation of black phosphorus via van der Waals stacked PTCDA

Rui Guo,Yue Zheng,Zhirui Ma,Xu Lian,Haicheng Sun,Cheng Han,Honghe Ding,Qian Xu,Xiaojiang Yu,Junfa Zhu,Wei Chen

DOI: https://doi.org/10.1016/j.apsusc.2019.143688

IF: 6.7

2019-01-01

Applied Surface Science

Abstract:Two-dimensional (2D) black phosphorus (BP) has received great attention due to its anisotropic mechanical, optical and electronic properties. However, the air-instability of BP seriously limits its further applications. Various approaches have been explored to improve the device stability of BP, including the encapsulation by inert 2D counterparts, and surface passivation by AlOx via atomic layer deposition and by organic layers either van der Waals stacked or covalently bonded onto the surface. Here we systematically investigate the surface passivation effect of perylenetetracarboxylic dianhydride (PTCDA) on BP through a variety of in-situ characterization techniques. PTCDA molecule on BP adopts a lying down configuration with the molecular π-plane almost parallel to the BP surface, arising from the formation of multiple intermolecular hydrogen bonds. The evaporation of PTCDA on BP does not modify the intrinsic structure and electrical transport property of BP, as revealed by in-situ ultraviolet photoelectron spectroscopy (UPS)/x-ray photoelectron spectroscopy (XPS), and further corroborated by in-situ field-effect-transistor (FET) evaluation. After the air-exposure of PTCDA covered BP in dark, no obvious degradation on BP was observed by XPS. However, the electron mobility of the passivated BP FET significantly decreased by 80% after 20 h exposure despite lifetime of the passivated device was prolonged.
Charge Transfer at the PTCDA/Black Phosphorus Interface

Can Wang,Dongmei Niu,Baoxing Liu,Shitan Wang,Xuhui Wei,Yuquan Liu,Haipeng Xie,Yongli Gao

DOI: https://doi.org/10.1021/acs.jpcc.7b06678

2017-01-01

Abstract:The interfacial electronic structure at the organic inorganic semiconductor interface plays an important role in determining the electrical and optical performance of organic-based devices. Here, we studied the molecular alignment and electronic structure of thermally deposited 3,4,9,10-perylene-tetracarboxylic-dianhydride (PTCDA) molecules on cleaved black phosphorus using photoelectron spectroscopy. The work function of black phosphorus is substantially upped with an organic thin film, originating from the charge transfer from black phosphorus to PTCDA. According to our photoemission spectrum and theoretical simulation, we also define the interaction between PTCDA and black phosphorus as weak van de Waals physisorption, rather than bonding chemisorption. Furthermore, we show that PTCDA thin film can effectively isolate reactive oxygen species, thereby protecting BP surface oxidation and deterioration under ambient conditions. Our results suggest the possibility of manipulating interfacial electronic structures of black phosphorus interface by noncovalent with organic particular for applications in high-performance organic inorganic hybrid photovoltaic. semiconductor, in particular for applications in high-performance organic inorganic hybrid photovoltaic.
Surface and interface control of black phosphorus

Li Zeng,Xue Zhang,Yanna Liu,Xiaoxi Yang,Jiahong Wang,Qian Liu,Qian Luo,Chuanyong Jing,Xue-Feng Yu,Guangbo Qu,Paul K. Chu,Guibin Jiang

DOI: https://doi.org/10.1016/j.chempr.2021.11.022

IF: 23.5

2022-03-01

Chem

Abstract:Black phosphorus (BP), a burgeoning class of two-dimensional semiconductors, possesses favorable properties such as large specific surface area, high charge carrier mobility, and thickness-dependent bandgap. In particular, the lone pair electrons of phosphorus atoms are highly reactive, and the structural anisotropy leads to many unique anisotropic physicochemical properties. The electronic structure and properties of BP are sensitive to external fields. In this respect, the surface and interface of BP can be modulated to adjust the optical, mechanical, magnetic, and electrical properties, but the relationship between the surface/interface structure and properties must be well understood to optimize one or more of these properties. In this review, recent progress pertaining to surface and interface control of BP is described. The topics include: (1) intrinsic characteristics of the BP surface and interfaces, (2) strategies to tailor and optimize the BP surface and interface, and (3) challenge and prospective.

chemistry, multidisciplinary
Interfacial properties of black phosphorus/transition metal carbide van der Waals heterostructures

Hao Yuan,Zhenyu Li

DOI: https://doi.org/10.1007/s11467-018-0759-1

2018-02-10

Abstract:Owing to its outstanding electronic properties, black phosphorus (BP) is considered as a promising material for next-generation optoelectronic devices. In this work, devices based on BP/MXene (Zrn+1CnT2, T = O, F, OH, n = 1, 2) van der Waals (vdW) heterostructures are designed via first-principles calculations. Zrn+1CnT2 compositions with appropriate work functions lead to the formation of Ohmic contact with BP in the vertical direction. Low Schottky barriers are found along the lateral direction in BP/Zr2CF2, BP/Zr2CO2H2, BP/Zr3C2F2, and BP/Zr3C2O2H2 bilayers, and BP/Zr3C2O2 even exhibits Ohmic contact behavior. BP/Zr2CO2 is a semiconducting heterostructure with type-II band alignment, which facilitates the separation of electron-hole pairs. The band structure of BP/Zr2CO2 can be effectively tuned via a perpendicular electric field, and BP is predicted to undergo a transition from donor to acceptor at a 0.4 V/Å electric field. The versatile electronic properties of the BP/MXene heterostructures examined in this work highlight their promising potential for applications in electronics.

Materials Science
The Study of Crystalline Orientation and Interface Thermal Conductance of Mechanical Exfoliated Black Phosphorus with Raman-based Techniques

TIANYU WANG,XINWEI WANG

DOI: https://doi.org/10.12783/tc33-te21/30347

2019-01-01

Abstract:Black phosphorus is a new two-dimensional material that has attracted worldwide interests. In this work, the exfoliated few-layered BP samples are fabricated on Si substrate. The crystalline orientation of these samples is identified with the optothermal Raman spectroscopy. The interface thermal conductance between fewlayered BP samples and its adjacent Si substrate is measured with the micro-Raman spectroscopy. BP samples with thicknesses between 16.6 and 113.7 nm are characterized in a temperature range of 223 to 229 K. These data make it possible to explore the temperature dependence and thickness dependence of interface thermal conductance. In fact, we have observed high interface thermal conductance with strong temperature dependence but weak or no thickness dependence. The underlying physical mechanisms of these observations are explored and discussed thoroughly.
Contacts between monolayer black phosphorene and metal electrodes: Ohmic, Schottky, and their regulating strategy

Kehua Zhong,Jiaxin Li,Guigui Xu,Yanmin Yang,Jian-Min Zhang,Zhigao Huang

DOI: https://doi.org/10.1063/5.0061876

IF: 2.877

2021-09-28

Journal of Applied Physics

Abstract:Two-dimensional black phosphorene (BP) has attracted much interest for application in electronic devices. Contacts between BP and metal electrodes are critical components of BP-based devices and can dramatically affect device performances. In this paper, we adopted first-principles calculations to explore binding energies, electronic structures, and potential distribution for interface systems of Al-, Au-, Cu-, Ni-, and Ti-monolayer BP in surface contact and edge contact (EC) types. Moreover, we also used density functional theoretical coupled with the nonequilibrium Green's function method to investigate contact resistances and Schottky barrier heights (SBHs) for transport systems of monolayer BP with Al, Au, Cu, Ni, and Ti electrodes. Our calculated results indicate that the contact type between BP and metals may greatly affect electrical properties of BP–metal contacts. Changing contact type between metal electrodes and BP channel can change the type of Schottky barrier of metal–BP contacts. The contact barrier of metal–BP depends on the metal material. Selecting an appropriate contact type and metal can effectively regulate the contact barrier of metal–BP. Specifically exciting, our estimated lateral SBHs for the Ni–BP system in EC-type agree well with the experimental results. We have provided a new strategy on choosing an appropriate contact type to achieve low contact resistance for the metal–BP interface.

physics, applied
First-principles Study of Spintronics Properties in Black Phosphorus Materials

Fulin Ning,Leyuan Gao,Jing Lu,Jia Liu,Jie Ren,Yunliang Yue,Tiege Zhou,Min Wang

DOI: https://doi.org/10.1016/j.micrna.2024.207787

2024-01-01

Micro and Nanostructures

Abstract:This paper presents a study on the electronic structure and spin properties of Transition Metal (TM) series doped Black Phosphorus (BP) using density functional theory (DFT) computations. The results indicate that the doped-Cr atom has the lowest formation energy in the BP system compared to other defects. Intrinsic defects do not induce magnetism in the BP material. However, the six types of TM atoms (Ti, V, Cr, Mn, Fe, and Ni) can lead to localized magnetic states in the system. Furthermore, researches on applying strain to the BP system have found that it will induce spin polarization in Co-doped system when applying 8% strain. Magnetic Couplings investigation demonstrate that Fe–Fe interactions exhibit ferromagnetic behavior in the BP system, with a Curie temperature above the room temperature at the d1 or d4 distance. These findings are significant to gain deeper insights into material spin polarization and magnetic modulation in functional materials and provide valuable references for the future development of spintronics.
Interface and surface engineering of black phosphorus: a review for optoelectronic and photonic applications

Haoran Mu,Wenzhi Yu,Jian Yuan,Shenghuang Lin,Guangyu Zhang

DOI: https://doi.org/10.1088/2752-5724/ac49e3

2022-03-01

Materials Futures

Abstract:Abstract Since being rediscovered as an emerging 2D material, black phosphorus (BP), with an extraordinary energy structure and unusually strong interlayer interactions, offers new opportunities for optoelectronics and photonics. However, due to the thin atomic body and the ease of degradation with water and oxides, BP is highly sensitive to the surrounding environment. Therefore, high-quality engineering of interfaces and surfaces plays an essential role in BP-based applications. In this review, begun with a review of properties of BP, different strategies of interface and surfaces engineering for high ON-OFF ratio, enhanced optical absorption, and fast optical response are reviewed and highlighted, and recent state-of-the-art advances on optoelectronic and photonic devices are demonstrated. Finally, the opportunities and challenges for future BP-related research are considered.

English Else
A black Phosphorus/BiVO4(010) heterostructure for promising photocatalytic performance: First-principles study

Rui Zhang,Guoqiang Hao,Hongbo Li,Xiaojun Ye,Shangpeng Gao,Xiao Yuan,Cui Liu

DOI: https://doi.org/10.1016/j.jpcs.2020.109466

IF: 4.383

2020-08-01

Journal of Physics and Chemistry of Solids

Abstract:Black phosphorus-based two-dimensional heterostructure photocatalysts have attracted much attention due to their prominent photocatalytic performance. However, theoretical analysis on the mechanism of photocatalytic activity is still lacking. Firstly, we comprehensively analyzed the structural and electronic properties of BP/BiVO4(010) heterostructure. It is found that the BP/BiVO4(010) composite was a stable interface and formed a type-II heterostructure. The density of states, Bader charge, and charge density difference were elucidated and the results show that the BiVO4(010) slab can act as a protect and supporting layer to protect monolayer BP from oxidation and deformation while still maintaining its electronic properties. In addition, the BP/BiVO4(010) is forming a built-in electric field from BP to BiVO4, which facilitate the separation of e−/h + pair at the BP/BiVO4 interface and enable the water with a high redox potential. These results provide monolayer BP-based composite photocatalysts and insightful understanding of the physical mechanism of this new synthesized system.

physics, condensed matter,chemistry, multidisciplinary
First Principles Study of Metal Contacts to Monolayer Black Phosphorous

Anuja Chanana,Santanu Mahapatra

DOI: https://doi.org/10.48550/arXiv.1411.5842

2014-11-21

Mesoscale and Nanoscale Physics

Abstract:Atomically thin layered black phosphorous (BP) has recently appeared as an alternative to the transitional metal di chalcogenides for future channel material in a MOS transistor due to its lower carrier effective mass. Investigation of the electronic property of source/drain contact involving metal and two-dimensional material is essential as it impacts the transistor performance. In this paper we perform a systematic and rigorous study to evaluate the Ohmic nature of the side-contact formed by the monolayer BP (mBP) and metals (gold, titanium and palladium), which are commonly used in experiments. Employing the Density Functional Theory (DFT), we analyse the potential barrier, charge transfer and atomic orbital overlap at the metal-mBP interface in an optimized structure to understand how efficiently carriers could be injected from metal contact to the mBP channel. Our analysis shows that gold forms a Schottky contact with a higher tunnel barrier at the interface in comparison to the titanium and palladium. mBP contact with palladium is found to be purely Ohmic, where as titanium contact demonstrates an intermediate behaviour.
Unified understanding to the rich electronic-structure evolutions of 2D black phosphorus under pressure

Yu-Meng Gao,Yue-Jiao Zhang,Xiao-Lin Zhao,Xin-Yu Li,Shu-Hui Wang,Chen-Dong Jin,Hu Zhang,Ru-Qian Lian,Rui-Ning Wang,Peng-Lai Gong,Jiang-Long Wang,Xing-Qiang Shi

2024-03-02

Abstract:The electronic structure evolutions of few-layer black phosphorus (BP) under pressure shows a wealth of phenomena, such as the nonmonotonic change of direct gap at the {\Gamma} point, the layer-number dependence, and the distinct responses to normal and hydrostatic pressures. A full and unified understanding to these rich phenomena remains lacking. Here, we provide a unified understanding from the competition between interlayer quasi-bonding (QB) interactions and intralayer chemical bonding interactions. The former decreases while the latter increases the band gap under pressure and the origin can be correlated to different combinations of inter- and intra-layer antibonding or bonding interactions at the band edges. More interestingly, the interlayer QB interactions are a coexistence of two categories of interactions, namely, the coexistence of interactions between bands of the same occupancy (occupied-occupied and empty-empty interactions) and of different occupancies (occupied-empty interaction); and, the overall effect is a four-level interaction, which explains the anomalous interlayer-antibonding feature of the conduction band edge of bilayer BP. Our current study lay the foundation for the electronic structure tuning of two-dimensional (2D) BP, and, our analysis method for multi-energy-level interactions can be applied to other 2D semiconductor homo- and hetero-structures that have occupied-empty interlayer interactions.

Materials Science
Interfacial Thermal Conductance Between Mechanically Exfoliated Black Phosphorus and SiOx: Effect of Thickness and Temperature

Tianyu Wang,Ridong Wang,Pengyu Yuan,Shen Xu,Jing Liu,Xinwei Wang

DOI: https://doi.org/10.1002/admi.201700233

IF: 5.4

2017-01-01

Advanced Materials Interfaces

Abstract:Black phosphorus (BP) is one of new 2D materials that have attracted wide attention. This work reports the interfacial thermal conductance between BP flake and SiOx using Raman spectroscopy. From 293 K down to the 223 K, eight BP flakes in a thickness range of 16.6–113.7 nm are characterized. At 293 K, the largest interfacial thermal conductance is 1.14 × 108 W m−2 K−1 for a 82.1 nm thick BP flake, and the smallest one is 2.17 × 107 W m−2 K−1 for a 26.6 nm thick BP flake. Such large interfacial thermal conductance can be attributed to the excellent interface contact and strong phonon coupling between BP and SiOx. The measured interfacial thermal conductance has a one‐fold up to around four‐fold increase with decreased temperature from 293 to 223 K, which is a result of thermal‐expansion‐mismatch induced variation in the morphology of BP flakes. Additionally, it demonstrates no thickness‐dependent behavior. It is speculated the intrinsic thickness dependence is weak and is overshadowed by the large variation in the interface contact of different samples. As a new 2D material, BP shows great potential to be a thermal interface material for heat dissipation in electronics.
Electrical contacts to monolayer black phosphorus: A first-principles investigation

Kui Gong,Lei Zhang,Wei Ji,Hong Guo

DOI: https://doi.org/10.1103/physrevb.90.125441

IF: 3.7

2014-09-23

Physical Review B

Abstract:We report first-principles theoretical investigations of possible metal contacts to monolayer black phosphorus (BP). By analyzing lattice geometry, five metal surfaces are found to have minimal lattice mismatch with BP: Cu(111), Zn(0001), In(110), Ta(110), and Nb(110). Further studies indicate Ta and Nb bond strongly with monolayer BP causing substantial bond distortions, but the combined Ta-BP and Nb-BP form good metal surfaces to contact a second layer BP. By analyzing the geometry, bonding, electronic structure, charge transfer, potential, and band bending, it is concluded that Cu(111) is the best candidate to form excellent Ohmic contact to monolayer BP. The other four metal surfaces or combined surfaces also provide viable structures to form metal/BP contacts, but they have Schottky character. Finally, the band bending property in the current-in-plane (CIP) structure where metal/BP is connected to a freestanding monolayer BP, is investigated. By both work function estimates and direct calculations of the two-probe CIP structure, we find that the freestanding BP channel is n type.

physics, condensed matter, applied,materials science, multidisciplinary
Optical Properties of Black Phosphorus and its Analogues

Xiaomu Wang,Fengnian Xia

DOI: https://doi.org/10.1364/CLEO_SI.2016.SW1R.1

2016-01-01

Abstract:Recently, black phosphorus (BP) emerges as a promising new two dimensional (2D) material due to its unique physical properties. In this talk, we will review the recent study of optical properties of thin-film to monolayer BP and the development of BP based photonic devices.

A first principles study of the interaction between two-dimensional black phosphorus and Al<sub>2</sub>O<sub>3</sub>dielectric

A First Principles Study of the Interaction Between Two-Dimensional Black Phosphorus and Al2O3dielectric

Dielectric Material for Monolayer Black Phosphorus Transistors: A First-Principles Investigation

First-principles Study on the Properties of GPBII(Al2CuMg)(001)and S(Al2CuMg)(001) Surfaces

O ct 2 01 8 Thermal transport properties of single-layer black phosphorous from extensive molecular dynamics simulations

Surface Chemistry of Black Phosphorus under a Controlled Oxidative Environment

Band-edge Engineering Via Molecule Intercalation: a New Strategy to Improve Stability of Few-Layer Black Phosphorus

Surface passivation of black phosphorus via van der Waals stacked PTCDA

Charge Transfer at the PTCDA/Black Phosphorus Interface

Surface and interface control of black phosphorus

Interfacial properties of black phosphorus/transition metal carbide van der Waals heterostructures

The Study of Crystalline Orientation and Interface Thermal Conductance of Mechanical Exfoliated Black Phosphorus with Raman-based Techniques

Contacts between monolayer black phosphorene and metal electrodes: Ohmic, Schottky, and their regulating strategy

First-principles Study of Spintronics Properties in Black Phosphorus Materials

Interface and surface engineering of black phosphorus: a review for optoelectronic and photonic applications

A black Phosphorus/BiVO4(010) heterostructure for promising photocatalytic performance: First-principles study

First Principles Study of Metal Contacts to Monolayer Black Phosphorous

Unified understanding to the rich electronic-structure evolutions of 2D black phosphorus under pressure

Interfacial Thermal Conductance Between Mechanically Exfoliated Black Phosphorus and SiOx: Effect of Thickness and Temperature

Electrical contacts to monolayer black phosphorus: A first-principles investigation

Optical Properties of Black Phosphorus and its Analogues