Abstract:The properties of metal–semiconductor junctions are often unpredictable because of non-ideal interfacial structures, such as interfacial defects or chemical reactions introduced at junctions. Black phosphorus (BP), an elemental two-dimensional (2D) semiconducting crystal, possesses a puckered atomic structure with high chemical reactivity, and the establishment of a realistic atomic-scale picture of BP's interface toward the metallic contact has remained elusive. Here, we examine the interfacial structures and properties of physically deposited metals of various kinds on BP. We find that Au, Ag, and Bi form single-crystalline films with a (110) orientation through guided van der Waals epitaxy. Transmission electron microscopy and X-ray photoelectron spectroscopy confirm that atomically sharp van der Waals metal–BP interfaces are formed with an exceptional rotational alignment. Under a weak metal–BP interaction regime, BP's puckered structure plays an essential role in the adatom assembly process and can lead to the formation of a single crystal, which is supported by our theoretical analysis and calculations. The experimental survey also demonstrates that the BP–metal junctions can exhibit various types of interfacial structures depending on metals, such as the formation of a polycrystalline microstructure or metal phosphides. This study provides a guideline for obtaining a realistic view on metal–2D semiconductor interfacial structures, especially for atomically puckered 2D crystals.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.chemmater.1c00267?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.chemmater.1c00267</a>.Schematic of the metal/BP sample fabrication process, AFM topography images, TEM/STEM characterization data of samples, interfacial binding energy calculation and structure relaxation of Au on BP, extra XPS spectra of Au–BP, summary of the lattice mismatch between BP and investigated metals, and calculated Gibbs free energies of metal phosphides at 298 K (<a class="ext-link" href="/doi/suppl/10.1021/acs.chemmater.1c00267/suppl_file/cm1c00267_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Electrical contacts to monolayer black Phosphorus: a first principles investigation

Electrical contacts to monolayer black phosphorus: A first-principles investigation

Contacts between monolayer black phosphorene and metal electrodes: Ohmic, Schottky, and their regulating strategy

First Principles Study of Metal Contacts to Monolayer Black Phosphorous

Black Phosphorus Transistors with Van Der Waals-type Electrical Contacts

Ohmic contact engineering in few-layer black Phosphorus field effect transistors

Electrical contacts in monolayer blue phosphorene devices

van der Waals Bonded Co/h-BN Contacts to Ultrathin Black Phosphorus Devices

Black Phosphorus Field-Effect Transistors with Work Function Tunable Contacts.

Monolayer Phosphorene–Metal Contacts

Dielectric Material for Monolayer Black Phosphorus Transistors: A First-Principles Investigation

Surface and interface control of black phosphorus

Monolayer Phosphorene-Metal Interfaces

Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling

Electric metal contacts to monolayer blue phosphorus: electronic and chemical properties

Interfacial properties of black phosphorus/transition metal carbide van der Waals heterostructures

Interfacial contact and electronic properties in the heterojunction based on black phosphorus and borophene

Monolayer Bismuthene-Metal Contacts: A Theoretical Study

Single-Crystalline Metallic Films Induced by van der Waals Epitaxy on Black Phosphorus

Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar and Scaling

Reduction of Fermi level pinning at Cu-BP interfaces by atomic passivation