Abstract:Bismuthene, a bismuth analogue of graphene, has a moderate band gap, has a high carrier mobility, has a topological nontriviality, has a high stability at room temperature, has an easy transferability, and is very attractive for electronics, optronics, and spintronics. The electrical contact plays a critical role in an actual device. The interfacial properties of monolayer (ML) bismuthene in contact with the metal electrodes spanning a wide work function range in a field-effect transistor configuration are systematically studied for the first time by using both first-principles electronic structure calculations and quantum transport simulations. The ML bismuthene always undergoes metallization upon contact with the six metal electrodes owing to a strong interaction. According to the quantum transport simulations, apparent metal-induced gap states (MIGSs) formed in the semiconductor-metal interface give rise to a strong Fermi-level pinning. As a result, the ML bismuthene forms an n-type Schottky contact with Ir/Ag/Ti electrodes with electron Schottky barrier heights (SBHs) of 0.17, 0.22, and 0.25 eV, respectively, and a p-type Schottky contact with Pt/Al/Au electrodes with hole SBHs of 0.09, 0.16, and 0.38 eV, respectively. The effective channel length of the ML bismuthene transistors is also significantly reduced by the MIGSs. However, the MIGSs are eliminated and the effective channel length is increased when ML graphene is used as an electrode, accompanied by a small hole SBH of 0.06 eV (quasi-Ohmic contact). Hence, an insight is provided into the interfacial properties of the ML bismuthene-metal composite systems and a guidance is provided for the choice of metal electrodes in ML bismuthene devices.

Ideal Electrodes for Monolayer Boron Phosphide and Their Device Performance

Monolayer SnS2 Schottky barrier field effect transistors: effects of electrodes

The in-plane graphene and boropheneβ12 contacted sub-10 nm monolayer black phosphorous Schottky barrier field-effect transistors

Sub-5-nm Monolayer Boron Pnictide MOSFETs for N- and P-Type High-Performance Applications

Can A Black Phosphorus Schottky Barrier Transistor Be Good Enough?

Monolayer Bismuthene-Metal Contacts: A Theoretical Study

Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar and Scaling

Ohmic MXene Contacts for Symmetric P- and N-Type Monolayer WSe2 Schottky Barrier Field-Effect Transistors

Contacts between monolayer black phosphorene and metal electrodes: Ohmic, Schottky, and their regulating strategy

Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling

Black Phosphorus Transistors with Van Der Waals-type Electrical Contacts

Black Phosphorus Field-Effect Transistors with Work Function Tunable Contacts.

Black Phosphorus Field-Effect Transistors with Improved Contact via Localized Joule Heating

Unusual Fermi‐Level Pinning and Ohmic Contact at Monolayer Bi2O2Se–Metal Interface

First Principles Study of Metal Contacts to Monolayer Black Phosphorous

High-performance sub-10-nm monolayer black phosphorene tunneling transistors

Effective Suppression of MIS Interface Defects Using Boron Nitride Toward High-Performance Ta-Doped-β-Ga2O3 MISFETs.

Transport Properties and Device Prospects of Ultrathin Black Phosphorus on Hexagonal Boron Nitride

Performance of Monolayer Blue Phosphorene Double-Gate MOSFETs from the First Principles.

Transport Properties of 5-nm Tunnel Field-Effect Transistor for High-Performance Switches Decorated With Blue Phosphorene and Transition Metals

Sub-5 Nm Monolayer Black Phosphorene Tunneling Transistors.