Abstract:Monolayer (ML) Ga2O3 with outstanding properties is promising for advanced nanodevice applications; however, its high exfoliation energy makes obtaining it challenging. In this study, we propose a more efficient solution to obtain ML Ga2O3 by exfoliation from indium-doped bulk & beta;-Ga2O3. The exfoliation efficiency with the assistance of In-doping and the doping influence on the stability and structural and electronic properties of ML Ga2O3 are systematically studied using first-principles calculations. The exfoliation energy of ML Ga2O3 is found to be reduced by 28% and is of the same order of magnitude as that of typical van der Waals (vdWs) 2D materials. Besides, excellent stability is preserved for ML Ga2O3 at extremely high In doping concentration by phonon spectrum and ab initio molecular dynamics inspections. The bandgap of ML Ga2O3 decreases from 4.88 to 4.25 eV with increased In concentration, and the modification of the VBM converts ML Ga2O3 to a direct bandgap semiconductor. With the suppression of ZA mode phonon scattering, the pristine and In-doped ML Ga2O3 exhibit high electron mobility, whereas the strong electron-phonon coupling (EPC) effect significantly decreases the hole mobility. Finally, the transfer characteristics of 5 nm MOSFETs based on the pristine and In-doped ML Ga2O3 with varied In concentrations are simulated based on the non-equilibrium Green's function (NEGF) formalism. The I-on for HP has a maximum of 3060 & mu;A & mu;m(-1) at In doping concentration of 5% and is triple that of the pristine ML Ga2O3 for LP at In doping concentration of 20%. The FOMs of n-type MOSFETs based on the In-doped ML Ga2O3 and typical 2D materials are compared and shows huge potential for sub-5 nm applications. Our study applies a new strategy for obtaining ML Ga2O3 and can also improve the device performance at the same time.

Effective Suppression of MIS Interface Defects Using Boron Nitride Toward High-Performance Ta-Doped-β-Ga2O3 MISFETs.

First-Principles-Based Quantum Transport Simulations of High- Performance and Low-Power MOSFETs Based on Monolayer Ga2O3

Indium Doping-Assisted Monolayer Ga2O3 Exfoliation for Performance-Enhanced MOSFETs.

Progress of power field effect transistor based on ultra-wide bandgap Ga2O3 semiconductor material

Quasi-two-dimensional β-Ga2O3 field effect transistors with large drain current density and low contact resistance via controlled formation of interfacial oxygen vacancies

Enhancement-mode Ga2O3 FETs with an unintentionally doped (001) β-Ga2O3 channel layer grown by metal-organic chemical vapor deposition

Design of Ga 2 O 3 Trench Gate MOSFET Devices with Dielectric Pillars

Enhancement‐Mode Β‐ga2o3 Metal‐Oxide‐Semiconductor Field‐Effect Transistor with High Breakdown Voltage over 3000 V Realized by Oxygen Annealing

Design And Fabrication Of Field-Plated Normally Off Beta-Ga2o3 Mosfet With Laminated-Ferroelectric Charge Storage Gate For High Power Application

702.3 A.cm(-2)/10.4 m Omega.cm(2) Vertical beta-Ga2O3 U-Shape Trench Gate MOSFET With N-Ion Implantation

702.3 A·cm⁻²/10.4 Mω·cm² Β-Ga₂o₃ U-Shape Trench Gate MOSFET with N-Ion Implantation

Enhancement-mode Β-Ga2o3 U-shaped Gate Trench Vertical MOSFET Realized by Oxygen Annealing

Trench Gate β-Ga2O3 MOSFETs: A Review

Demonstration of the normally off <b> <i>β</i> </b>-Ga2O3 MOSFET with high threshold voltage and high current density

Normally-off AlN/β-Ga2O3 Field-Effect Transistors Using Polarization-Induced Doping

Enhancement-mode Ga2O3 FETs with Unintentionally Doped (001) Β-Ga2o3 Channel Layer Grown by Metal-Organic Chemical Vapor Deposition

Undoped β-Ga 2 O 3 Layer Thickness Effect on the Performance of MOSFETs Grown on a Sapphire Substrate

Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs

Sub-100 nm β-Ga2O3 MOSFET with 55 GHz fMAX and >100 V breakdown

Demonstration of the normally off -Ga<sub>2</sub>O<sub>3</sub> MOSFET with high threshold voltage and high current density

A 800 V Β‐ga2o3 Metal–Oxide–Semiconductor Field‐Effect Transistor with High‐Power Figure of Merit of over 86.3 MW Cm−2