Abstract:The electronic properties of monolayer (ML) Ga2O3 and transport properties of ML Ga2O3-based n-type metal-oxide-semiconductor field-effect transistors (MOSFETs) are investigated by first-principles calculations under the framework of density functional theory (DFT) coupled with the nonequilibrium Green's function (NEGF) formalism. The results show that ML Ga2O3 has a quasi-direct band gap of 4.92 eV, and the x- and y-directed electron mobilities are 1210 and 816 cm2 V-1 s-1 at 300 K, respectively, under the full consideration of phonon scattering. The electron-phonon scattering mechanism shows a temperature-dependent behavior, with the acoustic modes dominating below 300 K and optical modes dominating above 300 K. At a gate length of Lg = 5 nm, the on-current of ML Ga2O3 n-MOSFET for high-performance (HP) application is 2890 μA/μm, which is more than those of the most reported two-dimensional (2D) materials. The delay time as well as the power delay product of ML Ga2O3 MOSFETs can meet the demands of the latest International Technology Roadmap for Semiconductors (ITRS) for HP and low-power (LP) applications until Lg is less than 4 and 5 nm, respectively. Through underlap structure and doping optimization strategies, ML Ga2O3 n-MOSFET can further fulfill the ITRS requirements for 1 nm. At last, we compare the performance of the 32-bit arithmetic logic unit (ALU) built on ML Ga2O3 MOSFETs with the recently reported beyond-CMOS devices. Our results indicate that ML Ga2O3 can serve as a promising channel material in the post-silicon era.

702.3 A.cm-2/10.4 Mω.cm2 Vertical Β-Ga2o3 U-Shape Trench Gate MOSFET with N-Ion Implantation

702.3 A·cm⁻²/10.4 Mω·cm² Β-Ga₂o₃ U-Shape Trench Gate MOSFET with N-Ion Implantation

1-Kv Β-Ga2o3umosfet with Quasi-Inversion Nitrogen-Ion-Implanted Channel

Enhancement-mode Β-Ga2o3 U-shaped Gate Trench Vertical MOSFET Realized by Oxygen Annealing

Effective Suppression of MIS Interface Defects Using Boron Nitride Toward High-Performance Ta-Doped-β-Ga2O3 MISFETs.

Design of Ga 2 O 3 Trench Gate MOSFET Devices with Dielectric Pillars

First-Principles-Based Quantum Transport Simulations of High- Performance and Low-Power MOSFETs Based on Monolayer Ga2O3

Monolithic beta-Ga2O3 Bidirectional MOSFET

Beta-Ga2O3 MOSFETs with near 50 GHz fMAX and 5.4 MV/cm average breakdown field

1-Nm-thick EOT High Mobility Ge N- and P-Mosfets with Ultrathin GeOx/Ge MOS Interfaces Fabricated by Plasma Post Oxidation

Electrical Properties of Ge Pmosfets with Ultrathin EOT HfO2/AlOx/GeOx Gate-Stacks and NiGe Metal Source/Drain

High-Voltage β-Ga 2 O 3 RF MOSFETs With a Shallowly-Implanted 2DEG-Like Channel

Source-Field-Plated Β-Ga2o3 MOSFET with Record Power Figure of Merit of 50.4 MW/cm2

Design of Enhancement Mode β-Ga2O3 Vertical Current Aperture MOSFETs With a Trench Gate

Demonstration of Ultra-Thin Buried Oxide Germanium-on-insulator MOSFETs by Direct Wafer Bonding and Polishing Techniques

High-Voltage Β-Ga2o3 RF MOSFETs with a Shallowly-Implanted 2Deg-Like Channel

Realizing High-Performance β-Ga2O3 MOSFET by Using Variation of Lateral Doping: A TCAD Study

High-Mobility Ge Pmosfet with 1-Nm EOT $\hbox{al}_{2} \hbox{o}_{3}/\hbox{geo}_{x}/\hbox{ge}$ Gate Stack Fabricated by Plasma Post Oxidation

Demonstration of β-Ga2O3 Superjunction-Equivalent MOSFETs

Trench Gate β-Ga2O3 MOSFETs: A Review

High-Mobility Ge P- and N-Mosfets with 0.7-Nm EOT Using $\hbox{hfo}_{2}/\hbox{al}_{2}\hbox{o}_{3}/\hbox{geo}_{x}/\hbox{ge}$ Gate Stacks Fabricated by Plasma Postoxidation