Abstract:Ulta-wide bandgap semiconductors based on $\beta$-Ga$_2$O$_3$ offer the potential to achieve higher power switching performance, efficiency, and lower manufacturing cost than today's wide bandgap power semiconductors. However, the most critical challenge to the commercialization of Ga$_2$O$_3$ electronics is overheating, which impacts the device's performance and reliability. We fabricated a Ga$_2$O$_3$/4H-SiC composite wafer using a fusion-bonding method. A low temperature ($\le$ 600 $^{\circ}$C) epitaxy and device processing approach based on low-temperature (LT) metalorganic vapor phase epitaxy is developed to grow a Ga$_2$O$_3$ epitaxial channel layer on the composite wafer and subsequently fabricate into Ga$_2$O$_3$ power MOSFETs. This LT approach is essential to preserve the structural integrity of the composite wafer. These LT-grown epitaxial Ga$_2$O$_3$ MOSFETs deliver high thermal performance (56% reduction in channel temperature), high voltage blocking capabilities up to 2.45 kV, and power figures of merit of $\sim$ 300 MW/cm$^2$, which is a record high for any heterogeneously integrated Ga$_2$O$_3$ devices reported to date. This work is the first realization of multi-kilovolt homoepitaxial Ga$_2$O$_3$ power MOSFETs fabricated on a composite substrate with high heat transfer performance which delivers state-of-the-art power density values while running much cooler than those on native substrates. Thermal characterization and modeling results reveal that a Ga$_2$O$_3$/diamond composite wafer with a reduced Ga$_2$O$_3$ thickness ($\sim$ 1 $\mu$m) and thinner bonding interlayer ($<$ 10 nm) can reduce the device thermal impedance to a level lower than today's GaN-on-SiC power switches.

Beta-Ga2O3 MOSFETs with near 50 GHz fMAX and 5.4 MV/cm average breakdown field

Sub-100 nm β-Ga2O3 MOSFET with 55 GHz fMAX and >100 V breakdown

$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation

Source-Field-Plated Β-Ga2o3 MOSFET with Record Power Figure of Merit of 50.4 MW/cm2

4.4 kV $β$-Ga$_2$O$_3$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm$^2$

Lateral Source Field-Plated Β-Ga2o3 MOSFET with Recorded Breakdown Voltage of 2360 V and Low Specific On-Resistance of 560 Mω Cm2

Effective Suppression of MIS Interface Defects Using Boron Nitride Toward High-Performance Ta-Doped-β-Ga2O3 MISFETs.

Enhancement‐Mode Β‐ga2o3 Metal‐Oxide‐Semiconductor Field‐Effect Transistor with High Breakdown Voltage over 3000 V Realized by Oxygen Annealing

High-Voltage β-Ga 2 O 3 RF MOSFETs With a Shallowly-Implanted 2DEG-Like Channel

A 800 V Β‐ga2o3 Metal–Oxide–Semiconductor Field‐Effect Transistor with High‐Power Figure of Merit of over 86.3 MW Cm−2

High-Voltage Β-Ga2o3 RF MOSFETs with a Shallowly-Implanted 2Deg-Like Channel

Demonstration of the normally off -Ga<sub>2</sub>O<sub>3</sub> MOSFET with high threshold voltage and high current density

702.3 A.cm(-2)/10.4 m Omega.cm(2) Vertical beta-Ga2O3 U-Shape Trench Gate MOSFET With N-Ion Implantation

702.3 A·cm⁻²/10.4 Mω·cm² Β-Ga₂o₃ U-Shape Trench Gate MOSFET with N-Ion Implantation

Progress of power field effect transistor based on ultra-wide bandgap Ga2O3 semiconductor material

Demonstration of the normally off <b> <i>β</i> </b>-Ga2O3 MOSFET with high threshold voltage and high current density

Heterointegrated Ga2O3-on-SiC RF MOSFETs with F T/f Max of 47/51 GHz by Ion-Cutting Process

Kilovolt-class β -Ga2O3 MOSFETs on 1-in. bulk substrates

First-Principles-Based Quantum Transport Simulations of High- Performance and Low-Power MOSFETs Based on Monolayer Ga2O3

Heterointegrated Ga<sub>2</sub>O<sub>3</sub>-on-SiC RF MOSFETs With <i>f</i><sub>T</sub>/<i>f</i><sub>max</sub> of 47/51 GHz by Ion-Cutting Process

Ultra-Wide Bandgap Ga$_2$O$_3$-on-SiC MOSFETs