Abstract:This letter reports a highly scaled 90 nm gate length beta-Ga2O3 T-gate MOSFET with no current collapse and record power gain cut off frequency (fMAX). The epitaxial stack of 60 nm thin channel MOSFET was grown by Molecular Beam Epitaxy (MBE) and highly doped (n++) contact regrowth was carried out by Metal Organic Chemical Vapour Deposition (MOCVD) in the source/drain region. Maximum on current (IDS, MAX) of 160 mA/mm and transconductance (gm) around 36 mS/mm was measured at VDS= 10 V for LSD= 1.5 micrometer channel length. Transconductance is limited by higher channel sheet resistance (Rsheet). We observed no current collapse for both drain and gate lag measurement even at higher VDG,Q quiescent bias points. This is the first report of Ga2O3 FET showing no current collapse without any external passivation. Breakdown voltage around 125 V was reported for LGD= 1.2 micrometer. We extracted 27 GHz current gain cut off frequency (fT) and 55 GHz fMAX for 20 V drain bias. fMAX value mentioned here is the highest for Ga2O3 and the first demonstration of 55 GHz operation. fT. VBR product of 3.375 THz.V has been calculated which is comparable with state-of-art GaN HEMT. This letter suggests that Ga2O3 can be a suitable candidate for X-band application.

Lateral Source Field-Plated Β-Ga2o3 MOSFET with Recorded Breakdown Voltage of 2360 V and Low Specific On-Resistance of 560 Mω Cm2

Source-Field-Plated Β-Ga2o3 MOSFET with Record Power Figure of Merit of 50.4 MW/cm2

4.4 kV $β$-Ga$_2$O$_3$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm$^2$

Beta-Ga2O3 MOSFETs with near 50 GHz fMAX and 5.4 MV/cm average breakdown field

Enhancement‐Mode Β‐ga2o3 Metal‐Oxide‐Semiconductor Field‐Effect Transistor with High Breakdown Voltage over 3000 V Realized by Oxygen Annealing

Sub-100 nm β-Ga2O3 MOSFET with 55 GHz fMAX and >100 V breakdown

A 2.8 kV Breakdown Voltage α-Ga2O3 MOSFET with Hybrid Schottky Drain Contact

Kilovolt GaN MOSHEMT on Silicon Substrate with Breakdown Electric Field Close to the Theoretical Limit

Effective Suppression of MIS Interface Defects Using Boron Nitride Toward High-Performance Ta-Doped-β-Ga2O3 MISFETs.

Kilovolt-class β -Ga2O3 MOSFETs on 1-in. bulk substrates

Simulation Research on High-Voltage β-Ga2O3 MOSFET Based on Floating Field Plate

Progress of power field effect transistor based on ultra-wide bandgap Ga2O3 semiconductor material

702.3 A.cm-2/10.4 Mω.cm2 Vertical Β-Ga2o3 U-Shape Trench Gate MOSFET with N-Ion Implantation

A high-breakdown-voltage β-Ga 2 O 3 nanoFET with a beveled field-plate structure

Electrical Characterization and Analysis of 4H-Sic Lateral MOSFET (LMOS) for High-Voltage Power Integrated Circuits

High-Voltage Β-Ga2o3 RF MOSFETs with a Shallowly-Implanted 2Deg-Like Channel

Design of Ga 2 O 3 Trench Gate MOSFET Devices with Dielectric Pillars

Enhancement-mode Ga2O3 FETs with an unintentionally doped (001) β-Ga2O3 channel layer grown by metal-organic chemical vapor deposition

702.3 A·cm⁻²/10.4 Mω·cm² Β-Ga₂o₃ U-Shape Trench Gate MOSFET with N-Ion Implantation

High Permittivity Dielectric Field-Plated Vertical (001) $β$-Ga$_2$O$_3$ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of $>$ 1 GW/cm$^{2}$

High-Voltage β-Ga 2 O 3 RF MOSFETs With a Shallowly-Implanted 2DEG-Like Channel