Abstract:In this work, we, for the first time, demonstrate $\beta $ -Ga2O3 lateral superjunction (SJ) -equivalent metal–oxide–semiconductor field-effect transistors (MOSFETs). The electric field engineering is implemented by the alternatively arranged p-NiO/n-Ga2O3 lateral hetero-SJ, which is constructed through the selective epitaxial filling of p-NiO pillars into the trenched drift region of $\beta $ -Ga2O3. The static electrical characteristics indicate that $\beta $ -Ga2O3 SJ-equivalent MOSFETs outperform the control transistor without the SJ structure. In particular, the Ga2O3SJ-equivalent MOSFET with a p-NiO pillar width of 2 $\mu \text{m}$ demonstrates a breakdown voltage ( ${V}_{\text {br}}$ ) of 1362 V and a power figure-of-merit (PFOM) of 39 MW/cm2, which are 2.42 and 4.86 times higher, respectively, than those of the control device. The large divergence of the experimental performance from the theoretical predictions is attributed to the charge imbalance caused by the substrate-assisted depletion effect and superimposed interfacial charges. With the proper interface engineering and controlled doping, it is expected that utilizing p-NiO/n-Ga2O3 hetero-SJ is a promising technological strategy to allow a favorable trade-off between ${V}_{\text {br}}$ and ON-state loss of Ga2O3 transistors for the high-efficiency power conversion.

4.4 kV $β$-Ga$_2$O$_3$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm$^2$

Source-Field-Plated Β-Ga2o3 MOSFET with Record Power Figure of Merit of 50.4 MW/cm2

Beta-Ga2O3 MOSFETs with near 50 GHz fMAX and 5.4 MV/cm average breakdown field

A 800 V Β‐ga2o3 Metal–Oxide–Semiconductor Field‐Effect Transistor with High‐Power Figure of Merit of over 86.3 MW Cm−2

Lateral Source Field-Plated Β-Ga2o3 MOSFET with Recorded Breakdown Voltage of 2360 V and Low Specific On-Resistance of 560 Mω Cm2

Sub-100 nm β-Ga2O3 MOSFET with 55 GHz fMAX and >100 V breakdown

Kilovolt-class β -Ga2O3 MOSFETs on 1-in. bulk substrates

Effective Suppression of MIS Interface Defects Using Boron Nitride Toward High-Performance Ta-Doped-β-Ga2O3 MISFETs.

Enhancement‐Mode Β‐ga2o3 Metal‐Oxide‐Semiconductor Field‐Effect Transistor with High Breakdown Voltage over 3000 V Realized by Oxygen Annealing

702.3 A·cm⁻²/10.4 Mω·cm² Β-Ga₂o₃ U-Shape Trench Gate MOSFET with N-Ion Implantation

$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation

High Permittivity Dielectric Field-Plated Vertical (001) $β$-Ga$_2$O$_3$ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of $>$ 1 GW/cm$^{2}$

Demonstration of the normally off -Ga<sub>2</sub>O<sub>3</sub> MOSFET with high threshold voltage and high current density

Field-Plated Lateral Β-Ga2o3 Schottky Barrier Diode with High Reverse Blocking Voltage of More Than 3 Kv and High DC Power Figure-of-Merit of 500 MW/cm2

6 Kv/3.4 Mω·cm2 Vertical Β-Ga2o3 Schottky Barrier Diode with BV2/Ron,sp Performance Exceeding 1-D Unipolar Limit of GaN and SiC

Depletion-Mode Β-Ga2o3 MOSFETs Grown by Nonvacuum, Cost-Effective Mist-CVD Method on Fe-Doped GaN Substrates

702.3 A.cm(-2)/10.4 m Omega.cm(2) Vertical beta-Ga2O3 U-Shape Trench Gate MOSFET With N-Ion Implantation

Deep-recessed $β$-Ga$_2$O$_3$ delta-doped field effect transistors with in situ epitaxial passivation

Design And Fabrication Of Field-Plated Normally Off Beta-Ga2o3 Mosfet With Laminated-Ferroelectric Charge Storage Gate For High Power Application

Monolithic beta-Ga2O3 Bidirectional MOSFET

Demonstration of Β-Ga₂o₃ Superjunction-Equivalent MOSFETs