Demonstration of β-Ga2O3 Superjunction-Equivalent MOSFETs
Yibo Wang,Hehe Gong,Xiaole Jia,Jiandong Ye,Yan Liu,Haodong Hu,Xin Ou,Xiaohua Ma,Rong Zhang,Yue Hao,Genquan Han
DOI: https://doi.org/10.1109/ted.2022.3152464
IF: 3.1
2022-04-01
IEEE Transactions on Electron Devices
Abstract:In this work, we, for the first time, demonstrate $\beta $ -Ga2O3 lateral superjunction (SJ) -equivalent metal–oxide–semiconductor field-effect transistors (MOSFETs). The electric field engineering is implemented by the alternatively arranged p-NiO/n-Ga2O3 lateral hetero-SJ, which is constructed through the selective epitaxial filling of p-NiO pillars into the trenched drift region of $\beta $ -Ga2O3. The static electrical characteristics indicate that $\beta $ -Ga2O3 SJ-equivalent MOSFETs outperform the control transistor without the SJ structure. In particular, the Ga2O3SJ-equivalent MOSFET with a p-NiO pillar width of 2 $\mu \text{m}$ demonstrates a breakdown voltage (${V}_{\text {br}}$ ) of 1362 V and a power figure-of-merit (PFOM) of 39 MW/cm2, which are 2.42 and 4.86 times higher, respectively, than those of the control device. The large divergence of the experimental performance from the theoretical predictions is attributed to the charge imbalance caused by the substrate-assisted depletion effect and superimposed interfacial charges. With the proper interface engineering and controlled doping, it is expected that utilizing p-NiO/n-Ga2O3 hetero-SJ is a promising technological strategy to allow a favorable trade-off between ${V}_{\text {br}}$ and ON-state loss of Ga2O3 transistors for the high-efficiency power conversion.
engineering, electrical & electronic,physics, applied