Abstract:Inspired by the recent achievements of the two-dimensional (2D) sub-5 nm MoS2 field effect transistors (FETs), we use the ab initio quantum-transport methods to simulate the transport properties of the sub-5 nm gate-length monolayer (ML) MoS2 MOSFETs. We find that the ML MoS2 double-gated MOSFETs (DGFETs) with the 1, 3, and 5 nm gate length fail to meet the on-state current requirements in the International Technology Roadmap for Semiconductors (ITRS) for high-performance (HP) devices. However, both the ML MoS2n- and p-DGFETs with 5 nm gate length can address the requirements in the ITRS for low-power (LP) applications in terms of on-state current, effective delay time, and power-delay products (PDPs). After the introduction of the negative capacitance dielectric layer, the ML MoS2p-DGFETs can satisfy the LP application requirements of ITRS until the gate length scales down to 3 nm. Hence, ML MoS2 remains a potential channel candidate for LP applications in the sub-5 nm scale.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaelm.0c00840?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaelm.0c00840</a>.On-state current, SS, delay time and power-delay products as a function of the UL length in the n- and p-type MoS2 DGFETs, and transfer characteristics of the DG n- and p-type UL-free ML MoS2 DGFET with and without the negative dielectric layer (<a class="ext-link" href="/doi/suppl/10.1021/acsaelm.0c00840/suppl_file/el0c00840_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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