Abstract:Two-dimensional layered materials (2DLMs) are of considerable interest for high-performance electronic devices for their unique electronic properties and atomically thin geometry. However, the atomically thin geometry makes their electronic properties highly susceptible to the environment changes. In particular, some 2DLMs (e.g., black phosphorus (BP) and SnSe2) are unstable and could rapidly degrade over time when exposed to ambient conditions. Therefore, the development of proper passivation schemes that can preserve the intrinsic properties and enhance their lifetime represents a key challenge for these atomically thin electronic materials. Herein we introduce a simple, nondisruptive, and scalable van der Waals passivation approach by using organic thin films to simultaneously improve the performance and air stability of BP field-effect transistors (FETs). We show that dioctylbenzothienobenzothiophene (C8-BTBT) thin films can be readily deposited on BP via van der Waals epitaxy approach to protect BP against oxidation in ambient conditions over 20 d. Importantly, the noncovalent van der Waals interface between C8-BTBT and BP effectively preserves the intrinsic properties of BP, allowing us to demonstrate high-performance BP FETs with a record-high current density of 920 μA/um, hole drift velocity over 1 × 107 cm/s, and on/off ratio of 1 × 104 to ∼1 × 107 at room temperature. This approach is generally applicable to other unstable two-dimensional materials, defining a unique pathway to modulate their electronic properties and realize high-performance devices through hybrid heterojunctions.

Sub-10 Nm Vertical Tunneling Transistors Based on Layered Black Phosphorene Homojunction

High-performance sub-10-nm monolayer black phosphorene tunneling transistors

Atomistic simulations of hetero-junction tunneling field-effect transistors with layered black phosphorus

Sub-5 Nm Monolayer Black Phosphorene Tunneling Transistors.

Black Phosphorus Radio-Frequency Transistors

Device Performance Simulations of Multilayer Black Phosphorus Tunneling Transistors

Vertical Josephson field-effect transistors based on black phosphorus

Interlayer Band‐to‐Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field‐Effect Transistors

High-performance sub-10 nm monolayer black arsenic phosphorus tunneling transistors

Can A Black Phosphorus Schottky Barrier Transistor Be Good Enough?

Impact of Edge States on Device Performance of Phosphorene Heterojunction Tunneling Field Effect Transistors

Atomically Thin Van Der Waals Tunnel Field-Effect Transistors and Its Potential for Applications

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

High-Performance Black Phosphorus Field-Effect Transistors with Long-Term Air Stability.

Performance and Reliability Improvement under High Current Densities in Black Phosphorus Transistors by Interface Engineering

Thickness Engineered Tunnel Field-Effect Transistors based on Phosphorene

Steep-slope vertical-transport transistors built from sub-5 nm Thin van der Waals heterostructures

Simulations of Quantum Transport in Sub-5-nm Monolayer Phosphorene Transistors

A Symmetric Tunnel Field-Effect Transistor Based on MoS2/Black Phosphorus/MoS2 Nanolayered Heterostructures

The in-plane graphene and boropheneβ12 contacted sub-10 nm monolayer black phosphorous Schottky barrier field-effect transistors

High-speed Black Phosphorus Field-Effect Transistors Approaching Ballistic Limit