Abstract:Thickness engineered tunneling field-effect transistors (TE-TFET) as a high performance ultra-scaled steep transistor is proposed. This device exploits a specific property of 2D materials: layer thickness dependent energy bandgap (Eg). Unlike the conventional hetero-junction TFETs, TE-TFET uses spatially varying layer thickness to form a hetero-junction. This offers advantages by avoiding the interface states and lattice mismatch problems. Furthermore, it boosts the ON-current to 1280$\mu A/\mu m$ for 15nm channel length. TE-TFET shows a channel length scalability down to 9nm with constant field scaling $E = V_{DD}/L_{ch}= 30V/nm$. Providing a higher ON current, phosphorene TE-TFET outperforms the homojunction phosphorene TFET and the TMD TFET in terms of extrinsic energy-delay product. In this work, the operation principles of TE-TFET and its performance sensitivity to the design parameters are investigated by the means of full-band atomistic quantum transport simulation.

What problem does this paper attempt to address?

The problems that this paper attempts to solve are two main challenges in the performance of traditional tunnel field - effect transistors (TFETs): 1. **Small ON - current**: Due to their structural and material properties, traditional TFETs usually have a small ON - current. This limits their applications in high - performance electronic devices. 2. **Channel length scaling problem**: As the channel length decreases, how to maintain good performance of the device is a difficult problem. To solve these problems, the paper proposes a thickness - engineered tunnel field - effect transistor (TE - TFET) based on phosphorene. This new device takes advantage of the layer - thickness - dependent band - gap characteristics of two - dimensional materials and forms a heterojunction through spatially varying layer thicknesses, thus avoiding the lattice - mismatch and interface - state problems existing in traditional heterojunction TFETs. Specifically: - **Increasing the ON - current**: By designing the source region and the channel region close to the source region to have a smaller band - gap, while other regions have a larger band - gap, the TE - TFET can achieve a shorter tunneling distance at the source - channel interface, thereby significantly increasing the ON - current. - **Improving the OFF - current**: Due to the existence of the large - band - gap region, the TE - TFET can still maintain a small leakage current in the OFF state. In addition, the paper also studies the working principle of the TE - TFET and its performance sensitivity to design parameters through full - band atomic quantum transport simulations. The experimental results show that the TE - TFET can achieve an ON - current as high as 1280 µA/µm at a 15 - nm channel length and can be extended to a 9 - nm channel length while maintaining good performance. In summary, this paper aims to overcome the performance bottlenecks of traditional TFETs by introducing a new device structure, thereby providing new solutions for the design of low - power - consumption, high - performance electronic devices.

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