Abstract:2D transition metal dichalcogenides (TMDs) have attracted a lot of attention recently for energy-efficient tunneling-field-effect transistor (TFET) applications due to their excellent gate control resulting from their atomically thin dimensions. However, most TMDs have bandgaps (Eg) and effective masses (m*) outside the optimum range needed for high performance. It is shown here that the newly discovered 2D material, few-layer phosphorene, has several properties ideally suited for TFET applications: 1) direct Eg in the optimum range ~1.0-0.4 eV, 2) light transport m* (0.15m0), 3) anisotropic m* which increases the density of states near the band edges, and 4) a high mobility. These properties combine to provide phosphorene TFET outstanding ION 1 mA/um, ON/OFF ratio~1e6, scalability to 6 nm channel length and 0.2 V supply voltage, thereby significantly outperforming the best TMD-TFETs in energy-delay products. Full-band atomistic quantum transport simulations establish phosphorene TFETs as serious candidates for energy-eficient and scalable replacements of MOSFETs.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **How to find a two - dimensional material suitable for tunneling field - effect transistors (TFETs) to achieve high - performance, low - power - consumption and scalable transistor technology**. Specifically, current metal - oxide - semiconductor field - effect transistors (MOSFETs) encounter performance bottlenecks when the size is reduced to sub - 20 - nm, especially due to the high leakage current and high power consumption caused by the direct tunneling from the source to the drain. Tunneling field - effect transistors (TFETs) are considered as a potential alternative to MOSFETs because they can operate at a lower operating voltage and have a steep turn - off - to - turn - on transition characteristic. However, traditional TFET materials (such as transition metal dichalcogenides TMDs) have deficiencies in bandgap (\( E_g \)) and effective mass (\( m^* \)), which limit their performance improvement. To solve these problems, researchers have proposed a new two - dimensional material - **few - layer phosphorene**. Phosphorene has a series of ideal properties, making it an ideal candidate material for high - performance TFETs: 1. **Bandgap (\( E_g \))**: The bandgap of phosphorene is between 0.4 eV and 1.0 eV, which is in the optimal range. 2. **Effective mass (\( m^* \))**: The transport effective mass of phosphorene is relatively light (about \( 0.15m_0 \)) and anisotropic, which increases the density of states near the band edge. 3. **High mobility**: Phosphorene exhibits a relatively high carrier mobility. 4. **Direct bandgap**: Even in a multilayer structure, phosphorene still maintains a direct bandgap, which is very important for efficient tunneling. Through these characteristics, phosphorene TFETs can achieve a higher on - current (\( I_{ON} \)), a better on - off ratio (\( I_{ON}/I_{OFF} \)), a lower capacitance and a smaller energy - delay product (EDP), thus being significantly superior to existing TMD - TFETs and other traditional materials. In addition, the layer - dependent bandgap and effective mass of phosphorene provide room for further performance optimization, enabling it to maintain good performance even at the sub - 10 - nm scale. In summary, this paper aims to show that few - layer phosphorene, as an ideal two - dimensional material, can significantly improve the performance of TFETs, especially in terms of low - power consumption and scalability.

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