Abstract:We perform a comprehensive first-principles study of the electronic properties of phosphorene nanoribbons, phosphorus nanotubes, multilayer phosphorene sheets, and heterobilayers of phosphorene and two-dimensional (2D) transition-metal dichalcogenide (TMDC) monolayer. The tensile strain and electric-field effects on electronic properties of low-dimensional phosphorene nanostructures are also investigated. Our calculations show that the bare zigzag phosphorene nanoribbons (z-PNRs) are metals regardless of the ribbon width, whereas the bare armchair phosphorene nanoribbons (a-PNRs) are semiconductors with indirect bandgaps and the bandgaps decrease with increasing ribbon width. We find that compressive (or tensile) strains can reduce (or enlarge) the bandgap of the bare a-PNRs while an in-plane electric field can significantly reduce the bandgap of the bare a-PNRs, leading to the semiconductor-to-metal transition beyond certain electric field. For edge-passivated PNR by hydrogen, z-PNRs become semiconductor with nearly direct bandgaps and a-PNRs are still semiconductor but with direct bandgaps. The response to tensile strain and electric field for the edge-passivated PNRs is similar to that for the edge-unpassivated (bare) a-PNRs. For single-walled phosphorus nanotubes, both armchair and zigzag nanotubes are semiconductors with direct bandgaps. With either tensile strains or transverse electric field, behavior of bandgap modulation similar to that for a-PNRs can arise. It is known that multilayer phosphorene sheets are semiconductors whose bandgaps decrease with an increase in the number of multilayers. In the presence of a vertical electric field, the bandgaps of multilayer phosphorene sheets decrease with increasing electric field and the bandgap modulation is more significant with more layers. Lastly, heterobilayers of phosphorene (p-type) with an n-type TMDC (MoS2 or WS2) monolayer are still semiconductors while their bandgaps can be reduced by applying a vertical electric field as well. We also show that the combined phosphorene/MoS2 heterolayers can be an effective solar cell material. Our estimated power conversion efficiency for the phosphorene/MoS2 heterobilayer has a theoretical maximum value of 17.5%.

Layer-dependent Electronic Properties of Phosphorene-Like Materials and Phosphorene-Based Van Der Waals Heterostructures.

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Direct Observation of the Layer-Dependent Electronic Structure in Phosphorene.

Phosphorene: A New 2D Material with High Carrier Mobility

Layer-Dependent Electronic and Optical Properties of 2D Black Phosphorus: Fundamentals and Engineering

Electronic Properties of Layered Phosphorus Heterostructures.

Modulated electronic and optical properties of bilayer/trilayer Blue Phosphorene/MoX2 (X=S, Se) van der Waals heterostructures

Phosphorene Nanoribbons, Phosphorus Nanotubes, and van der Waals Multilayers

Gate tunable quantum oscillations in air-stable and high mobility few-layer phosphorene heterostructures

Layer-dependent Band Alignment and Work Function of Few-Layer Phosphorene

Strain-engineering the Anisotropic Electrical Conductance of Few-Layer Black Phosphorus.

Recent Advances in Phosphorene: Structure, Synthesis, and Properties

Structure and properties of phosphorene-like IV-VI 2D materials

Phosphorene: Fabrication, Properties and Applications

Semiconducting Black Phosphorus: Synthesis, Transport Properties and Electronic Applications

Van der Waals Heterostructures Based on Allotropes of Phosphorene and MoSe2

Switchable electric polarization of phosphorene in mixed dimensional van der Waals heterostructure

First-principles insights of electronic properties of Blue Phosphorus/MoSi2N4 van der Waals heterostructure via vertical electric field and biaxial strain

Tunable Band Gap and Anisotropic Optical Response in Few-layer Black Phosphorus

Layer-Dependent Ultrafast Carrier and Coherent Phonon Dynamics in Black Phosphorus.

Extraordinary Photoluminescence and Strong Temperature/Angle-Dependent Raman Responses in Few-Layer Phosphorene