Abstract:The structural and electronic properties of the bulk and ultrathin black phosphorus and the effects of in-plane strain and out-of-plane electrical field on the electronic structure of phosphorene are investigated using first-principles methods. The computed results show that the bulk and few-layer black phosphorus from monolayer to six-layer demonstrates inherent direct bandgap features ranging from 0.5 to 1.6 eV. Interestingly, the band structures of the bulk and few-layer black phosphorus from X point via A point to Y point present degenerate distribution, which shows totally different partial charge dispersions. Moreover, strong anisotropy in regard to carrier effective mass has been observed along different directions. The response of phosphorene to in-plane strain is diverse. The bandgap monotonically decreases with increasing compressive strain, and semiconductor-to-metal transition occurs for phosphorene when the biaxial compressive reaches -9%. Tensile strain first enlarges the gap until the strain reaches around 4%, after which the bandgap exhibits a descending relationship with tensile strain. The bandgaps of the pristine and deformed phosphorene can also be continuously modulated by the electrical field and finally close up at about 15 V/nm. Besides, the electron and hole effective mass along different directions exhibits different responses to the combined impact of strain and electrical field.

Strain-engineering the Anisotropic Electrical Conductance of Few-Layer Black Phosphorus.

Modulation of the Electronic Properties of Ultrathin Black Phosphorus by Strain and Electrical Field

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Mechanical and Electrical Anisotropy of Few-Layer Black Phosphorus

Strain-Induced Gap Transition and Anisotropic Dirac-Like Cones in Monolayer and Bilayer Phosphorene

The Phosphorene Under The External Electronic Field And Strain

Superior mechanical flexibility of phosphorene and few-layer black phosphorus

Strain-controlled Fundamental Gap and Structure of Bulk Black Phosphorus

Tunable Band Gap and Anisotropic Optical Response in Few-layer Black Phosphorus

Remarkable Anisotropic Phonon Response in Uniaxially Strained Few-Layer Black Phosphorus

High-mobility Transport Anisotropy and Linear Dichroism in Few-Layer Black Phosphorus

Strain-controlled thermoelectric properties of phosphorene hetero-bilayers

Strong Thermal Transport Anisotropy and Strain Modulation in Single-Layer Phosphorene

Resolving and Tuning Mechanical Anisotropy in Black Phosphorus via Nanomechanical Multimode Resonance Spectromicroscopy

Strain-Tunable Van Der Waals Interactions In Few-Layer Black Phosphorus

Engineering of the electronic structure of Fe-adsorbed black phosphorus monolayer by strain

Strain-modulated Bandgap and Piezo-resistive Effect in Black Phosphorus Field-effect Transistors

High-mobility transport symmetry and effect of strain on electronic and optical properties in few-layer blue phosphorus

Strain-induced Recovery of Electronic Anisotropy in 90°-Twisted Bilayer Phosphorene

Strain-induced band structure and mobility modulation in graphitic blue phosphorus

Strain engineering the charged-impurity-limited carrier mobility in phosphorene