Abstract:We perform a comprehensive first-principles study of the electronic properties of phosphorene nanoribbons, phosphorus nanotubes, multilayer phosphorene sheets, and heterobilayers of phosphorene and two-dimensional (2D) transition-metal dichalcogenide (TMDC) monolayer. The tensile strain and electric-field effects on electronic properties of low-dimensional phosphorene nanostructures are also investigated. Our calculations show that the bare zigzag phosphorene nanoribbons (z-PNRs) are metals regardless of the ribbon width, whereas the bare armchair phosphorene nanoribbons (a-PNRs) are semiconductors with indirect bandgaps and the bandgaps decrease with increasing ribbon width. We find that compressive (or tensile) strains can reduce (or enlarge) the bandgap of the bare a-PNRs while an in-plane electric field can significantly reduce the bandgap of the bare a-PNRs, leading to the semiconductor-to-metal transition beyond certain electric field. For edge-passivated PNR by hydrogen, z-PNRs become semiconductor with nearly direct bandgaps and a-PNRs are still semiconductor but with direct bandgaps. The response to tensile strain and electric field for the edge-passivated PNRs is similar to that for the edge-unpassivated (bare) a-PNRs. For single-walled phosphorus nanotubes, both armchair and zigzag nanotubes are semiconductors with direct bandgaps. With either tensile strains or transverse electric field, behavior of bandgap modulation similar to that for a-PNRs can arise. It is known that multilayer phosphorene sheets are semiconductors whose bandgaps decrease with an increase in the number of multilayers. In the presence of a vertical electric field, the bandgaps of multilayer phosphorene sheets decrease with increasing electric field and the bandgap modulation is more significant with more layers. Lastly, heterobilayers of phosphorene (p-type) with an n-type TMDC (MoS2 or WS2) monolayer are still semiconductors while their bandgaps can be reduced by applying a vertical electric field as well. We also show that the combined phosphorene/MoS2 heterolayers can be an effective solar cell material. Our estimated power conversion efficiency for the phosphorene/MoS2 heterobilayer has a theoretical maximum value of 17.5%.

The Phosphorene Under The External Electronic Field And Strain

Ab Initio Study of Tunable Band Gap of Monolayer and Bilayer Phosphorene by the Vertical Electronic Field

Tunable bandgap of monolayer black phosphorus by using vertical electric field: A DFT study

Strain-Induced Gap Transition and Anisotropic Dirac-Like Cones in Monolayer and Bilayer Phosphorene

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Strain-tunable Photogalvanic Effect in Phosphorene

Strain-induced band structure and mobility modulation in graphitic blue phosphorus

Superior mechanical flexibility and strained-engineered direct-indirect band gap transition of green phosphorene

Strain-engineering the Anisotropic Electrical Conductance of Few-Layer Black Phosphorus.

Phosphorene Nanoribbons, Phosphorus Nanotubes, and van der Waals Multilayers

Strain-controlled thermoelectric properties of phosphorene hetero-bilayers

Anisotropic Elastic Behaviour and One-Dimensional Metal in Phosphorene

Straintronics in Phosphorene: Tensile vs Shear Strains and Their Combinations for Manipulating the Band Gap

Phosphorene as a nanoelectromechanical material

Uniaxial Strain-Induced Tunable Mid-infrared Light Emission from Thin Film Black Phosphorus.

Phase Changes Study of the InP Crystal under External Stress

Deformation-induced band gap variation in phosphorene: tight-binding model vs. first-principles simulations

Tuning electronic structures and optical properties of graphene/phosphorene heterostructure via electric field

Electric-field tunable electronic properties and Schottky contact of graphene/phosphorene heterostructure

Strain Engineering for Phosphorene: The Potential Application as a Photocatalyst

Superior mechanical flexibility of phosphorene and few-layer black phosphorus