Uniaxial Strain-Induced Tunable Mid-infrared Light Emission from Thin Film Black Phosphorus.

Hao Chen,Xun Ge,Yiming Wang,Qianqian Xu,Zhifeng Li,Xiaohao Zhou,Jiaming Hao,Weida Hu,Shengjuan Li,Xingjun Wang
DOI: https://doi.org/10.1021/acs.jpclett.3c00145
2023-01-01
Abstract:Strain engineering is a powerful tool that can modulate semiconductor device performance. Here, we demonstrate that the bandgap of thin film (similar to 40 nm) black phosphorus (bP) can be continuously tuned from 2.9 to 3.9 mu m by applying an in-plane uniaxial strain, as evidenced by mid-infrared photoluminescence (PL) spectroscopy. The deduced bandgap strain coefficients are similar to 103 meV %-1, which coincide with those obtained in few-layer bP. On the basis of first-principles calculations, the origin of the uniaxial tensile strain-induced PL enhancement is suggested to be due to the increase in both the effective mass ratio (me*/mh*) and the bandgap, leading to the increment of the radiative efficiency. Moreover, the mid-infrared PL emission remains perfectly linear-polarized along the armchair direction regardless of tensile or compressive strain. The highly tunable bandgap of bP in the mid-infrared regime opens up opportunities for the realization of mid-infrared light-emitting diodes and lasers using layered materials.
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