Abstract:We perform comprehensive density-functional theory calculations on strained two-dimensional phosphorus (P), arsenic (As) and antimony (Sb) in the monolayer, bilayer, and bulk $\alpha$-phase, from which we compute the key mechanical and electronic properties of these materials. Specifically, we compute their electronic band structures, band gaps, and charge-carrier effective masses, and identify the qualitative electronic and structural transitions that may occur. Moreover, we compute the elastic properties such as the Young's modulus $Y$; shear modulus $G$; bulk modulus $\mathcal{B}$; and Poisson ratio $\nu$ and present their isotropic averages of as well as their dependence on the in-plane orientation, for which the relevant expressions are derived. We predict strain-induced Dirac states in the monolayers of As and Sb and the bilayers of P, As, and Sb, as well as the possible existence of Weyl states in the bulk phases of P and As. These phases are predicted to support charge velocities up to $10^6$~$\textrm{ms}^{-1}$ and, in some highly anisotropic cases, permit one-dimensional ballistic conductivity in the puckered direction. We also predict numerous band gap transitions for moderate in-plane stresses. Our results contribute to the mounting evidence for the utility of these materials, made possible by their broad range in tuneable properties, and facilitate the directed exploration of their potential application in next-generation electronics.

Phase Changes Study of the InP Crystal under External Stress

The Phosphorene Under The External Electronic Field And Strain

First-Principles Study on Strain-Induced Modulation of Electronic Properties in Indium Phosphide

In-situ Neutron Diffraction Study of Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 Single Crystals under Uniaxial Mechanical Stress

Phase transition and band-structure tuning in InN through uniaxial and biaxial strains

First-Principle Study of Strain-Driven Phase Transition in Incipient Ferroelectric Srtio3

Experimental investigation of shear stress effects on shock‐induced phase transition in InSb single crystal

Experimental Investigation of Shear-Stress Effects on Shock-Induced Phase-Transition in Insb Single-Crystal

The effect of mechanical strains on the ferroelectric and dielectric properties of a model single crystal ? Phase field simulation

Raman spectroscopy study of pressure-induced phase transitions in single crystal CuInP2S6

Strain-induced Weyl and Dirac states and direct-indirect gap transitions in group-V materials

Phase-Transition Induced Elastic Softening and Band Gap Transition in Semiconducting Pbs at High Pressure

Localized Deformation and Fracture Behaviors in InP Single Crystals by Indentation

Effect of external mechanical stress on the domain structure of Pb(Zr0.35Ti0.65)O3 thin films

Ab initio calculation of band edges modified by (001) biaxial strain in group IIIA–VA and group IIB–VIA semiconductors: Application to quasiparticle energy levels of strained InAs/InP quantum dot

Investigations on the effect of arsenic and phosphorus atomic exchange on the origin of crystal potential fluctuations in InAsP/InP epilayers

Structural Ability and Electronic Density of States in (001)- and (111)-Oriented (Gap)1/(inp)1strained-Layer Superlattices

Stress-Induced Phase Transitions in Nanoscale CuInP$_2$S$_6$

Equivalence of Electronic and Mechanical Stresses in Structural Phase Stabilization: A Case Study of Indium Wires on Si(111)

Effects Of Internal Strain And External Pressure On Electronic Structures And Optical Transitions Of Self-Assembled Inxga1-Xas/Gaas Quantum Dots: An Experimental And Theoretical Study