Abstract:A systematic theoretical study of the electronic and optical properties of Ga$_{1-x}$In$_x$As self-assembled quantum-wires (QWR's) made of short-period superlattices (SPS) with strain-induced lateral ordering is presented. The theory is based on the effective bond-orbital model (EBOM) combined with a valence-force field (VFF) model. Valence-band anisotropy, band mixing, and effects due to local strain distribution at the atomistic level are all taken into account. Several structure models with varying degrees of alloy mixing for lateral modulation are considered. A valence force field model is used to find the equilibrium atomic positions in the QWR structure by minimizing the lattice energy. The strain tensor at each atomic (In or Ga) site is then obtained and included in the calculation of electronic states and optical properties. It is found that different local arrangement of atoms leads to very different strain distribution, which in turn alters the optical properties. In particular, we found that in model structures with thick capping layer the electron and hole are confined in the Ga-rich region and the optical anisotropy can be reversed due to the variation of lateral alloying mixing, while for model structures with thin capping layer the electron and hole are confined in the In-rich region, and the optical anisotropy is much less sensitive to the lateral alloy mixing.

Structural Ability and Electronic Density of States in (001)- and (111)-Oriented (Gap)1/(inp)1strained-Layer Superlattices

Electric fields and valence band offsets at strained [111] heterojunctions

Electronic Structure of (111)-Oriented Strained-Layer SiGe Superlattice

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

Electronic-Structures of Strained-Layer Superlattices (Si)2n/(si1-Xgex)2n(100) with N=1-10

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

Electronic Structures of Strained Layer Superlattices (Si)m/(Si1-xGex)m(100) with m=1 and m=2n (n=1-10)

BAND STRUCTURE OF Si/Ge STRAINED LAYER SUPERLATTICE

Theoretical Study of Structures and Growth of Strained Si/Ge Superlattices

Interface Layers in In0.532ga0.468as/Inp Superlattices

First-principles study of structural stability and electronic properties of Sb/GaSb(111) semimetal–semiconductor superlattice

Lattice-Dynamics Of Strained Si/Ge Superlattices

Effects of microscopic strain distribution on Ga(1-x)In(x)As quantum wires grown by strain-induced lateral ordering

Systematic study of Ga$_{1-x}$In$_x$As self-assembled quantum wires with different interfacial strain relaxation

GEOMETRICAL CONFIGURATIONS OF (si)n/(ge)n SUPERLATTICES

Strain-dependent Electronic Structure and Optical Properties of Monolayer Indium Selenide: A Density Functional + Tight-Binding Model + Many-Body Perturbation Theory Study

Strained Α-Sn/ge Superlattices: Geometrical Structures and Phonon Spectra

Strain Relaxation Induced by Interfacial Steps of GaAs/In0.2Ga0.8As Superlattices

Strain effects on electronic structure and optics of al-Doped monolayer GaS

Strained Alpha-Sn/Ge Superlattices - Geometrical Structures And Phonon-Spectra

Effect of Strain on the Growth of InAs/GaSb Superlattices: An X-Ray Study