Abstract:The lattice quality of strain superlattice structures in Quantum Cascade Lasers (QCLs) directly influences the photoelectric properties and service life of the lasers. However, the evaluation method for lattice quality on the nanoscale is not very well developed at present, especially for interface lattice quality assessment. In this investigation, all atoms positioned in the multiple interface layers can be simultaneously and accurately determined through Subset Geometric Phase Analysis (S-GPA) combined with a Peak Finding (PF) method and an Optimal Approximation Algorithm (OAA) with a sensitivity of about 0.04 Å. Based on the determined interface location, the strain distribution in all layers of the superlattice structure was simultaneously measured using the improved S-GPA by means of the optimal selection of multiple reference areas. A quantitative evaluation of the strain/stress compensation effect was then carried out based on the theoretical model of elastic mechanics. The proposed method was successfully applied to evaluating the lattice quality of an In0.6Ga0.4As/In0.44Al0.56As superlattice structure grown by Molecular Beam Epitaxy (MBE). The obtained results show that the interface lattices are almost perfect with a uniform thickness of layers, without any defects and stress concentration. Each In0.44Al0.56As layer and adjacent In0.6Ga0.4As layers provided effective strain/stress compensation for each other, reducing the possibility of forming dislocations. In one period, the active region has been properly strain-balanced to give a nearly net zero strain. The proposed method can not only be applied in evaluating the growth quality of the superlattice structure with a large field of view, but also provide quantitative experimental data for further improving the superlattice design.

Strain Relaxation Induced by Interfacial Steps of GaAs/In0.2Ga0.8As Superlattices

Electric fields and valence band offsets at strained [111] heterojunctions

Effect of Strain on the Growth of InAs/GaSb Superlattices: An X-Ray Study

XRD Reciprocal Space Mapping of InAsP/InGaAsP/InP Strain Epilayers

Strain relaxation of GaAs/Ge crystals on patterned Si substrates

Interface Layers in In0.532ga0.468as/Inp Superlattices

A REM study of inhomogeneous stress fields induced by the interfacial steps at In0.2Ga0.8As/GaAs interface

Quantitative Evaluation of the Interface Lattice Quality of a Strain Superlattice by Strain Analysis.

Different Strain Relief Behaviors in Al0.35ga0.65n/Gan Multiple Quantum Wells on Gan/Sapphire Templates with Aln/Gan Supperlattices and Low-Temperature Aln Interlayers

Systematic study of Ga$_{1-x}$In$_x$As self-assembled quantum wires with different interfacial strain relaxation

Structural Ability and Electronic Density of States in (001)- and (111)-Oriented (Gap)1/(inp)1strained-Layer Superlattices

The Influence Of Graded Inxga1-Xas On Strain Distribution And The Band Gap In The Inas/Gaas Quantum Dots

Strain-Field Induced Crosshatch Formation During Molecular Beam Epitaxy of InGaAs/GaAs Films

Strain Effect on the Diffusion of Interstitial Mn in Gaas

Study of Strain in Partially Relaxed Ge Epilayers on Si(100) Substrate

Strain evolution and confinement effect in InAs/AlAs short-period superlattices studied by Raman spectroscopy

Strain in Epitaxial High-Index Bi2Se3(221) Films Grown by Molecular-Beam Epitaxy

Strain study of partially relaxed Ge epilayers on Si (100) substrate

Structural and Photoluminescence Properties for Highly Strain-Compensated InGaAs/InAlAs Superlattice

Stress Mapping of a Strain Superlattice Using Scanning Moiré Fringe Imaging

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)