Abstract:Surface roughening associated with strain relaxation of Si1-xGex films grown epitaxially on (100) Si substrates has been investigated using transmission electron microscopy, atomic force microscopy and x-ray diffraction. Epitaxial films 100 Å in thickness and containing 18% Ge, which are subcritical with respect to the formation of misfit dislocations, show strain relaxation through surface roughening on annealing at 700 °C. Enhanced surface grooves aligned along <100> directions are observed in films annealed at 850 °C. Strain relaxation as measured by x-ray diffraction is significantly greater at the higher temperature. Prolonged anneals at 850 °C also result in islanding. The surface roughening processes have also been studied in subcritical films with 15% Ge at 900 °C. These films also show enhanced grooving aligned along <100> directions. These observations are consistent with an anisotropic elastic analysis which indicates that grooving should occur preferentially along <100> directions. Intermixing effects in these samples have also been investigated through depth profiling using Auger Electron Spectroscopy. In addition to the above subcritical films, other films with 18% and 22% Ge and supercritical thicknesses have also been studied. For these films, surface grooving is observed along <110> directions, which suggests that these grooves are related to the formation of misfit dislocation networks. The role of these surface roughening processes in the nucleation of dislocations has also been explored.

Study of Strain in Partially Relaxed Ge Epilayers on Si(100) Substrate

Strain study of partially relaxed Ge epilayers on Si (100) substrate

Strain Status of Epitaxial Ge Film on A Si (001) Substrate

Strain Relaxation and Misfit Dislocation in SiGe Epilayers Grown in Micron Size Windows by MBE

Strained Layer Instabilities on Vicinal Surfaces: Ge0.8Si0.2 Epitaxy on Laser Textured Si(001)

Investigation of Strain-Relaxed SiGe Thin Film Grown on Ion-Implanted Si Compliant Substrate

Evolution of Mosaic Structure in Si0.7ge0.3 Epilayers Grown on Si(001) Substrates

Strained State of the Layer System Depending on the SiGe Layer Thickness by Micro-Raman Mapping

Strain Relaxation in Heteroepitaxial Si<sub>1-x</sub>Ge<sub>x</sub> Films via Surface Roughening Processes

Investigation of Strain in SiGe/Si (100) Heteroepitaxial Material by Various Characterization Technology

Raman-Study Of Strained Sige Layers

XRD Reciprocal Space Mapping of InAsP/InGaAsP/InP Strain Epilayers

SURFACTANT EFFECT ON THE STRUCTURE OF THIN Ge HETEROEPILAYERS STUDIED BY X-RAY DIFFRACTION

Strains in Si Substrate Induced by Formation of Ge Islands

Strain Relaxation in Heteroepitaxial Si1-xGex Films via Surface Roughening Processes

A Dislocation-Driven Laminated Relaxation Process in Si1−xGex Grown on Si (001) by Molecular Beam Epitaxy

A New Method of Fabricating Strained Silicon Materials

Thin Relaxed SiGe Layer Grown on Ar^＋ Ion Implanted Si Substrate by Ultra-High Vacuum Chemical Vapor Deposition

Strain relaxation of GaAs/Ge crystals on patterned Si substrates

Strain Relaxation In Sige Virtual Substrate Characterized By High Resolution X-Ray Diffraction

Strain Evolution of Ge on Insulator Formed by Rapid Melting Growth