Abstract:Germanium on silicon has the potential to enable growth of high quality group IV semiconductors for the field of silicon photonics by being used as virtual buffers. In addition Ge layers can be used in the fabrication of passive components such as waveguides and resonators. A cost-effective technology for the heteroepitaxial growth of Ge on Si will be highly beneficial. In this work, a simplified chemical vapor deposition reactor was assembled in-house to deposit Ge films. Epitaxial Ge film growth on Si (100) substrates was accomplished without requiring ultra-high vacuum conditions or a high temperature substrate pre-deposition bake thereby minimizing the economic and thermal budget of the process. Films were deposited using digermane (Ge2H6) precursor in a single step at a process temperature of 350 °C and chamber pressures of 1–10 Torr. Films were achieved at high chamber background pressures (>10−6 Torr) by implementing a thorough ex situ substrate cleaning process and optimizing times for wafer loading, chamber pumping and initiation of film deposition. Transmission electron microscopy and X-ray diffraction were used to confirm the epitaxial growth and crystalline quality of the obtained films. Optical properties of the films were characterized using Raman spectroscopy, Photoluminescence and Infra-red spectroscopy.

Growth of Ge-Si strained layers and DC XRD study on epitaxial films

Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

Characterization and growth of germanium-silicon epitaxial layers by UHV/CVD

Heteroepitaxial Growth of Ge Films on Si Substrates by Molecular-Beam Epitaxy

Study of Si and Ge growth on Si(100) surface

Growth of Near Planar Si0.5 Ge0.5 Epitaxial Layers Directly on Si Substrate by UHV/CVD at 500℃

Ultrathin Low Temperature Si0.75Ge0.25/Si Buffer Layer for the Growth of High Quality Ge Epilayer on Si (100) by RPCVD

Growth of SiC Buffers for Strained Si Film Epitaxy

High quality Ge epilayer on Si (100) with an ultrathin Si1-xGex/Si buffer layer by RPCVD

Growth of Thick Ge Epitaxial Layers with Low Dislocation Density on Silicon Substrate by UHV/CVD

Doping And Growth Of Thin Si Epilayer And Sige By Uhv/Cvd

High quality Ge epilayer on Si (1 0 0) with an ultrathin Si1−x Ge x /Si buffer layer by RPCVD

High Quality Ge Epilayer on Si (1 0 0) with an Ultrathin Si1−xGex/Si Buffer Layer by RPCVD

Selective Area Growth of Ge Film on Si

Study of growth technique and characterization of SiGe single crystalline grown on Si(111) substrate by liquid phase epitaxy

Reduced Perssure-Chemical Vapor Deposition of High Quality Ge Layers on SiGe/Si Superlayers for Microelectronics and Optoelectronics Purposes

Fabrication of Strained Ge Film Using a Thin SiGe Virtual Substrate

Epitaxial Ge thin film Growth on Si Using a Cost-Effective Process in Simplified CVD Reactor

Strain study of partially relaxed Ge epilayers on Si (100) substrate

Epitaxial growth of thick Ge layers with low dislocation density on silicon substrate by UHV/CVD