Abstract:Germanium (Ge) films have been grown on silicon (Si) substrate by ultrahigh-vacuum chemical vapor deposition with plasma enhancement (PE). Argon plasma was generated using high-power radiofrequency (50 W) to assist in germane decomposition at low temperature. The growth temperature was varied in the low range of 250°C to 450°C to make this growth process compatible with complementary metal–oxide–semiconductor technology. The material and optical properties of the grown Ge films were investigated. The material quality was determined by Raman and x-ray diffraction techniques, revealing growth of crystalline films in the temperature range of 350°C to 450°C. Photoluminescence spectra revealed improved optical quality at growth temperatures of 400°C and 450°C. Furthermore, material quality study using transmission electron microscopy revealed existence of defects in the Ge layer grown at 400°C. Based on the etch pit density, the average threading dislocation density in the Ge layer obtained at this growth temperature was measured to be 4.5 × 108 cm−2. This result was achieved without any material improvement steps such as use of graded buffer or thermal annealing. Comparison between PE and non-plasma-enhanced growth, in the same machine at otherwise the same growth conditions, indicated increased growth rate and improved material and optical qualities for PE growth.

Characterization and growth of germanium-silicon epitaxial layers by UHV/CVD

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Doping And Growth Of Thin Si Epilayer And Sige By Uhv/Cvd

Growth of Ge-Si strained layers and DC XRD study on epitaxial films

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

An Ultrahigh Vacuum Chemical Vapor Deposition System and Si, GeSi Epitaxy on a Three-Inch Si Wafer

Characterization of a Czochralski Grown Silicon Crystal Doped with 1020 Cm‐3 Germanium

Characterization of silicon epitaxial layer growth at low temperature by UHV/CVD

Heteroepitaxial Growth of Germanium-on-Silicon Using Ultrahigh-Vacuum Chemical Vapor Deposition with RF Plasma Enhancement

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Epitaxial Ge thin film Growth on Si Using a Cost-Effective Process in Simplified CVD Reactor

The growth of Si1− x − y Ge x C y alloys with high carbon content by ultra-high vacuum chemical vapor deposition

Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

Growth and Electro-Optical Characteristics of CdSe / GaAs Epilayers Prepared by Electron Beam Epitaxy

Homoepitaxial Chemical Vapor Deposition of up to 150 μm Thick 4H-SiC Epilayers in a 10×100 mm Batch Reactor

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

Growth and Characterization of Silicon Molecular Beam Epilayers on GaP (111) Substrates

Chemical Vapor Deposition and Defect Characterization of Silicon Carbide Epitaxial Films

Strain and Electrical Characterization of Boron-Doped Sigec Layers Grown by Chemical Vapor Deposition

Surface segregation and content variation in Si1-xGex growth on Si in ultrahigh vacuum by CVD

Growth Mechanism and Dislocation Characterization of Silicon Carbide Epitaxial Films