Abstract:Epitaxial growth of Ge films on Si(100) substrates has been studied under ultra-high vacuum chemical vapor deposition (UHV-CVD) conditions by using digermane (Ge2H6) as the precursor. It was found out that high quality layers with thicknesses beyond 500 nm could be produced at complementary metal-oxide-semiconductor (CMOS) compatible conditions, demonstrating low defect density, sharp and narrow X-ray diffraction peaks, as well as room temperature photoluminescence around 1550 nm. The surface roughness values are comparable to prior reduced pressure chemical vapor deposition (RPCVD) results at similar growth temperatures. By employing higher growth temperatures, growth rates are significantly enhanced, resulting in much thicker layers beyond 2000 nm. Smoother sample surface could also be obtained, yielding a state-of-the-art surface root-mean-square (RMS) roughness value of 0.34 nm for the as-grown sample. At the same time, after being annealed at 750 °C for 20 minutes, the full width at half maximum (FWHM) of X-ray diffraction 004 rocking curve spectrum of the Ge layer is as low as 88 arcseconds, which stands the best among all Ge/Si samples. The current work has provided important reference for Ge/Si growth with Ge2H6 in low pressure regime and solidified material grounding for Ge-based optoelectronics and Si photonics.

An Ultrahigh Vacuum Chemical Vapor Deposition System and Si, GeSi Epitaxy on a Three-Inch Si Wafer

Doping And Growth Of Thin Si Epilayer And Sige By Uhv/Cvd

An Ultrahigh Vacuum Chemical Vapor Deposition System and Its Application to Growth of Nmosfet and Hbt Structures

Characterization and growth of germanium-silicon epitaxial layers by UHV/CVD

Epitaxy of SiGe Layers by Ultrahigh Vacuum Chemical Vapor Deposition

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

Nano-structured Multi-Layer SiGe Alloy Grown by Ultra High Vacuum Chemical Vapor Deposition

Growth of Ge-Si strained layers and DC XRD study on epitaxial films

Surface segregation and content variation in Si1-xGex growth on Si in ultrahigh vacuum by CVD

The growth of Si1− x − y Ge x C y alloys with high carbon content by ultra-high vacuum chemical vapor deposition

The Property of Si／SiGe／Si Heterostructure During Thermal Budget Characterized by HRXRD

Growth of SiGe film by using a single-wafer rapid thermal processing UHV/CVD system

Study of Si Epitaxy on Porous Si by Ultrahigh Vacuum Chemical Vapor Deposition

Electrochemical Etching Used on Uhv Cvd Epitaxial Thin Films

Optimization of Ge Fraction in SiGe Epitaxial Films by UHV/CVD System

Chemical Vapor Deposition and Defect Characterization of Silicon Carbide Epitaxial Films

Homoepitaxial Chemical Vapor Deposition of up to 150 μm Thick 4H-SiC Epilayers in a 10×100 mm Batch Reactor

Sige Epitaxy with Graded Buffer by Ultrahigh Vacuum Chemical Vapor Deposition

Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

Study of Si and Ge growth on Si(100) surface

Characterization of silicon epitaxial layer growth at low temperature by UHV/CVD