Abstract:Abstract Silicon carbide (SiC) has been widely utilized in semiconductor industry for the development of high power electrical devices. Using chemical vapor deposition (CVD) to grow a thin epitaxial layer onto SiC substrate surface with orderly lattice arrangement, good surface morphology and low doping concentration is required. During epitaxial growth, the high reaction temperature and its distribution are generally difficult to measure and will affect the properties of epitaxial growth layer. This study presents a thermal-field testing method based on process temperature control rings (PTCRs) to measure the high temperature distribution inside the epitaxial growth reaction chamber, and to study the effects of reaction chamber structure and epitaxial growth parameters on the quality of epitaxial layer. The measurement accuracy of PTCRs was characterized using silicon melting experiments and the measuring principle of PTCRs was presented. The thermal field of the reaction chamber was then numerically simulated and compared with experimental results. The experiment results exhibit a temperature gradient of less than 0.4 °C/mm on surface, indicating good temperature uniformity. Epitaxial growth is an essential process in the fabrication of SiC devices, as it enables the production of layers with precise doping density and thickness. The SiC epitaxial growth experiments were conducted to study the effects of gas flow ratio and doping flow ratio of three inlet flow channels on the thickness and doping concentration distributions. The results demonstrated that the non-uniformity of thickness and doping concentration of epitaxial layer was below 1.5 % and 4.0 %, respectively.

Characterization of silicon epitaxial layer growth at low temperature by UHV/CVD

Characterization and growth of germanium-silicon epitaxial layers by UHV/CVD

300mm Cold-Wall UHV/CVD Reactor for Low-Temperature Epitaxial (100) Silicon

Silicon nano-wires grown at low temperature

Doping And Growth Of Thin Si Epilayer And Sige By Uhv/Cvd

Chemical Vapor Deposition and Defect Characterization of Silicon Carbide Epitaxial Films

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

An Ultrahigh Vacuum Chemical Vapor Deposition System and Si, GeSi Epitaxy on a Three-Inch Si Wafer

A Study on Intrinsic Silicon Epitaxy by UHV/CVD

Ultrahigh vacuum chemical vapor deposition system and its application to growth of nMOSFET and HBT structures

Electrochemical Etching Used on Uhv Cvd Epitaxial Thin Films

Study of Si Epitaxy on Porous Si by Ultrahigh Vacuum Chemical Vapor Deposition

Growth of Fully Relaxed Si0. 83Ge0. 17 Layer Free of Dislocations by UHV/CVD System

Measurement of Thermal Field Temperature Distribution Inside Reaction Chamber for Epitaxial Growth of Silicon Carbide Layer

Homoepitaxial Chemical Vapor Deposition of up to 150 μm Thick 4H-SiC Epilayers in a 10×100 mm Batch Reactor

Structural characterization of low temperature epi-silicon grown on {100} and {111} Si substrates using ultrahigh resolution cross-sectional TEM

UHV/CVD Si Epitaxial Growth on Double Layer Porous Silicon

Vapour-phase Graphene Epitaxy at Low Temperatures

The growth of Si1− x − y Ge x C y alloys with high carbon content by ultra-high vacuum chemical vapor deposition

Epitaxy of SiGe Layers by Ultrahigh Vacuum Chemical Vapor Deposition

Low-Temperature Growth Of Ultra-Thin Nano-Crystalline Diamond Films By Hfcvd In A Ch4/H-2 Mixture