Abstract:Epitaxial growth of Ge films on Si(100) substrates has been studied under ultra-high vacuum chemical vapor deposition (UHV-CVD) conditions by using digermane (Ge2H6) as the precursor. It was found out that high quality layers with thicknesses beyond 500 nm could be produced at complementary metal-oxide-semiconductor (CMOS) compatible conditions, demonstrating low defect density, sharp and narrow X-ray diffraction peaks, as well as room temperature photoluminescence around 1550 nm. The surface roughness values are comparable to prior reduced pressure chemical vapor deposition (RPCVD) results at similar growth temperatures. By employing higher growth temperatures, growth rates are significantly enhanced, resulting in much thicker layers beyond 2000 nm. Smoother sample surface could also be obtained, yielding a state-of-the-art surface root-mean-square (RMS) roughness value of 0.34 nm for the as-grown sample. At the same time, after being annealed at 750 °C for 20 minutes, the full width at half maximum (FWHM) of X-ray diffraction 004 rocking curve spectrum of the Ge layer is as low as 88 arcseconds, which stands the best among all Ge/Si samples. The current work has provided important reference for Ge/Si growth with Ge2H6 in low pressure regime and solidified material grounding for Ge-based optoelectronics and Si photonics.

A Study on Intrinsic Silicon Epitaxy by UHV/CVD

Comparison Study of Metal Induced Lateral Crystallized and Solid-Phase Crystallized Polycrystalline Silicon Thin Film Transistors with Different Channel Thickness

UHV/CVD i-Si epitaxy and ion implantation doping for sub-micrometer N -Collector of SiGeHBT

Doping And Growth Of Thin Si Epilayer And Sige By Uhv/Cvd

UHV/CVD n--type silicon epitaxy used for SiGe HBT device

Characterization and growth of germanium-silicon epitaxial layers by UHV/CVD

An Ultrahigh Vacuum Chemical Vapor Deposition System and Si, GeSi Epitaxy on a Three-Inch Si Wafer

Characterization of silicon epitaxial layer growth at low temperature by UHV/CVD

Study of Si Epitaxy on Porous Si by Ultrahigh Vacuum Chemical Vapor Deposition

On the Intrinsic Spacer Layer in Si/SiGe Heterojunction Bipolar Transistor Grown by Ultra High Vacuum Chemical Vapor Deposition

Epitaxy of SiGe HBT Structure by High Vacuum/Rapid Thermal Processing／Chemical Vapor Deposition

A study on the strain stability of Si/SiGe layer structure in a heterojunction bipolar transistor during thermal processing

Electrical Characteristics and Selective Growth of SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

Chemical Vapor Deposition and Defect Characterization of Silicon Carbide Epitaxial Films

Study of Si and Ge growth on Si(100) surface

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

Study of Heteroepitaxial 4H-SiC Films Growth on AlN/Si(111) Substrates by CVD

Multilayer Epitaxial Growth and Fabrication of 4H-SiC BJT with Double Base Epilayers

Cross-Sectional Transmission Electron Microscopy Study of Si/Sige Heterojunction Bipolar Transistor Structure Grown by Ultra-High Vacuum Chemical Vapor Deposition

Growth of Ge-Si strained layers and DC XRD study on epitaxial films

UHV/CVD Si Epitaxial Growth on Double Layer Porous Silicon