Selective Epitaxy of Germanium on silicon for the fabrication of CMOS compatible short-wavelength infrared photodetectors
Diana Ryzhak,Agnieszka Anna Corley-Wiciak,Patrick Steglich,Yuji Yamamoto,Jacopo Frigerio,Raffaele Giani,Andrea De Iacovo,Davide Spirito,Giovanni Capellini
DOI: https://doi.org/10.1016/j.mssp.2024.108308
IF: 4.1
2024-03-14
Materials Science in Semiconductor Processing
Abstract:Here we present the selective epitaxial growth of Ge on Si using reduced pressure chemical vapor deposition on SiO 2 /Si solid masks realized on 200 mm Si wafers, aiming at manufacturing integrated visible/short-wavelength infrared photodetectors. By a suitable choice of the reactants and of the process conditions, we demonstrated highly selective and pattern-independent growth of Ge microstructure featuring high crystalline quality. The Ge "patches" show a distinct faceting, with a flat top (001) facet and low energy facets such as e.g. {113} and {103} at their sidewalls, independently on their size. Interdiffusion of Si in to the Ge microcrystals is limited to an extension of ∼20 nm from the heterointerface. The Ge patches resulted to be plastically relaxed with threading dislocation density values better or on par than those observed in continuous two-dimensional Ge/Si epilayer in the low 10 7 cm −2 range. A residual tensile strain was observed for patches with size >10 μm, due to elastic thermal strain accumulation, as confirmed by μ-Raman spectroscopy and μ-photoluminescence characterization. Polarization-dependent Raman mapping highlights the strain distribution associated to the tridimensional shape. On this material, Ge photodiodes were fabricated and characterized, showing promising optoelectronic performances.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied