Abstract:With the development of new designs and materials for nano-scale transistors, vertical Gate-All-Around Field Effect Transistors (vGAAFETs) with germanium as channel materials have emerged as excellent choices. The driving forces for this choice are the full control of the short channel effect and the high carrier mobility in the channel region. In this work, a novel process to form the structure for a VGAA transistor with a Ge channel is presented. The structure consists of multilayers of Si0.2Ge0.8/Ge grown on a Ge buffer layer grown by the reduced pressure chemical vapor deposition technique. The Ge buffer layer growth consists of low-temperature growth at 400 °C and high-temperature growth at 650 °C. The impact of the epitaxial quality of the Ge buffer on the defect density in the Si0.2Ge0.8/Ge stack has been studied. In this part, different thicknesses (0.6, 1.2 and 2.0 μm) of the Ge buffer on the quality of the Si0.2Ge0.8/Ge stack structure have been investigated. The thicker Ge buffer layer can improve surface roughness. A high-quality and atomically smooth surface with RMS 0.73 nm of the Si0.2Ge0.8/Ge stack structure can be successfully realized on the 1.2 μm Ge buffer layer. After the epitaxy step, the multilayer is vertically dry-etched to form a fin where the Ge channel is selectively released to SiGe by using wet-etching in HNO3 and H2O2 solution at room temperature. It has been found that the solution concentration has a great effect on the etch rate. The relative etching depth of Ge is linearly dependent on the etching time in H2O2 solution. The results of this study emphasize the selective etching of germanium and provide the experimental basis for the release of germanium channels in the future.

Selective CVD of germanium on silicon and its applications

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Epitaxial Ge thin film Growth on Si Using a Cost-Effective Process in Simplified CVD Reactor

Characterization of a Czochralski Grown Silicon Crystal Doped with 1020 Cm‐3 Germanium

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

Germanium doping for improved silicon substrates and devices

On the Assumed Impact of Germanium Doping on Void Formation in Czochralski-Grown Silicon

Electrical Characteristics and Selective Growth of SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

Growth and doping of silicon carbide with germanium: a review

Ge CMOS Technology with Advanced Interface and Junction Engineering.

Heteroepitaxial Growth of Germanium-on-Silicon Using Ultrahigh-Vacuum Chemical Vapor Deposition with RF Plasma Enhancement

Germanium in Czochralski Silicon

Selective Epitaxy of Germanium on silicon for the fabrication of CMOS compatible short-wavelength infrared photodetectors

Study on epsilon crossover wavelength tuning of heavily doped germanium-on-silicon in mid-infrared range

High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy

Tensile-Strained Germanium CMOS Integration on Silicon

Strained Si0.2Ge0.8/Ge multilayer Stacks Epitaxially Grown on a Low-/High-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium

Investigation on Ge 0.8 Si 0.2 -Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice.

High quality CVD deposition of Ge layers for Ge/SiGe Quantum Well heterostructures

Germanium effect on void defects in Czochralski silicon