Abstract:Germanium (Ge), the next-in-line group-IV material, bears great potential to add functionality and performance to next-generation nanoelectronics and solid-state quantum transport based on silicon (Si) technology. Here, we investigate the direct epitaxial growth of two-dimensional high-quality crystalline Ge layers on Si deposited at ultra-low growth temperatures ($T_{Ge} = 100^{\circ}\mathrm{C}-350^{\circ}\mathrm{C}$) and pristine growth pressures ($\lesssim 10^{-10}\,\mathrm{mbar}$). First, we show that $T_{Ge}$ does not degrade the crystal quality of homoepitaxial Ge/Ge(001) by comparing the point defect density using positron annihilation lifetime spectroscopy. Subsequently, we present a systematic investigation of the Ge/Si(001) heteroepitaxy, varying the Ge coverage (${\theta}_{Ge}$, 1, 2, 4, 8, 12, and 16 nm) and $T_{Ge}$ ($100^{\circ}\mathrm{C}$ to $300^{\circ}\mathrm{C}$, in increments of $50^{\circ}\mathrm{C}$) to assess the influence of these parameters on the layer's structural quality. Atomic force microscopy revealed a rippled surface topography with superimposed grainy features and the absence of three-dimensional structures, such as quantum dots. Transmission electron microscopy unveiled pseudomorphic, grains of highly crystalline growth separated by defective domains. Thanks to nanobeam scanning x-ray diffraction measurements, we were able to evidence the lattice strain fluctuations due to the ripple-like structure of the layers. We conclude that the heteroepitaxial strain contributes to the formation of the ripples, which originate from the kinetic limitations of the ultra-low temperatures.

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

Growth of Thick Ge Epitaxial Layers with Low Dislocation Density on Silicon Substrate by UHV/CVD

Epitaxial growth of thick Ge layers with low dislocation density on silicon substrate by UHV/CVD

Ultrathin Low Temperature Si0.75Ge0.25/Si Buffer Layer for the Growth of High Quality Ge Epilayer on Si (100) by RPCVD

Growth of Near Planar Si0.5 Ge0.5 Epitaxial Layers Directly on Si Substrate by UHV/CVD at 500℃

Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

High quality Ge epilayer on Si (100) with an ultrathin Si1-xGex/Si buffer layer by RPCVD

Reduced Perssure-Chemical Vapor Deposition of High Quality Ge Layers on SiGe/Si Superlayers for Microelectronics and Optoelectronics Purposes

Growth of Ge on Silicon by Ultrahigh Vacuum Chemical Vapor Deposition

High quality Ge epilayer on Si (1 0 0) with an ultrathin Si1−x Ge x /Si buffer layer by RPCVD

Heteroepitaxial Growth of Ge Films on Si Substrates by Molecular-Beam Epitaxy

High Quality Ge Epilayer on Si (1 0 0) with an Ultrathin Si1−xGex/Si Buffer Layer by RPCVD

Epitaxial Ge thin film Growth on Si Using a Cost-Effective Process in Simplified CVD Reactor

Ultralow Temperature Ramping Rate of LT to HT for the Growth of High Quality Ge Epilayer on Si (100) by RPCVD

High-quality Strain-Relaxed Si0.72Ge0.28 Layers Grown by MBE-UHV/CVD Combined Deposition Chamber

Ultrathin Low Temperature Sige Buffer For The Growth Of High Quality Ge Epilayer On Si(100) By Ultrahigh Vacuum Chemical Vapor Deposition

Growth of Ge-Si strained layers and DC XRD study on epitaxial films

High quality Ge-rich SiGe thin films epitaxially grown on Si at low temperature by two-step approach

Study of Si and Ge growth on Si(100) surface

Nano-structured Multi-Layer SiGe Alloy Grown by Ultra High Vacuum Chemical Vapor Deposition

Ge epitaxy at ultra-low growth temperatures enabled by a pristine growth environment