Abstract:The dense domes of Ge quantum dots on Si （001） substrate with a monomodal morphology distribution are deposited at different temperatures by ion beam sputtering （IBS）. The areal density of the Ge quantum dots is observed to increase with elevating temperature, but the dots size to decrease. As the deposition temperature increases to 750 ℃ , the smaller Ge quantum dots each with a height of 14.5 nm and base width of 52.7 nm are obtained by sputtering 15 monolayer Ge coverage, and the dots areal density is up to 1.68 × 10^10 cm^-2 at the same time. Thus the evolution of Ge quantum dot prepared by IBS is very different from that by vapor deposition at thermal equilibrium condition. The stable shape and the size distribution are demonstrated to result from the kinetic behavior of the surface atoms which is restricted by the thermodynamic limitations. A mix-crystal interface including amorphous and crystal components is revealed by Raman spectrum, and this special interface is demonstrated to contribute to the high density of Ge quantum dots, since the boundaries between the two different components can provide more preferential centers for the nucleation. As the density increases at high deposition temperature, the elastic repulsion between islands is enhanced, resulting in the surface atoms growing along the orientation of high index during the IBS deposition, and inducing the increase in aspect ratio and the reduction in island size.

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Ultra-high-density Ge quantum dots on insulator prepared by high-vacuum electron-beam evaporation

Densely packed Ge quantum dots grown on SiO2/Si substrate☆

High-density Ge Dots Grown on Si Substrate by Modified S-K Method

Deposition of high-density Ge quantum dots on ultra-thin SiO2/Si(111) film surface

Deposition of high-density Ge quantum dots on ultra-thin SiO2/Si(1 1 1) film surface

Study on crystal growth of Ge/Si quantum dots at different Ge deposition by using magnetron sputtering technique

Study on Growth and Morphology Properties of Ge/Si (100) Quantum Dots

Influence Of The Growth Temperature Of Si Buffer Layers On Ge Quantum Dots

Growth of Ge quantum dots on SiO2/Si(111) surface

Growth Control of Ge/Si Quantum Dots

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Interface Interdiffusion Intensified by Formation of Quantum Dots

Evolution of Ge/Si Quantum Dots Self-Assembled Grown by Ion Beam Sputtering

Growth of Ge Quantum Dot at the Mix-Crystal Interface Self-Induced on the Ion Beam Sputtering Deposition

A Two-Stage Molecular Beam Epitaxial Growth Method to Fabricate Small and Uniform Ge Quantum Dots on Si(1 0 0)

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Optical properties of Ge/Si quantum dot superlattices

Small-Size Ge/Si(001) Quantum Dots Grown By Molecular Boam Epitaxy

Microstructure and optical response optimization of Ge/Si quantum dots transformed from the sputtering-grown Ge thin film by manipulating the thermal annealing.