Abstract:In recent years, quantum dots have been successfully grown by self-assembling processes. For opto-electronic device applications, the quantum-dot structures have advantages such as reduced phonon scattering, longer carrier lifetime, and lower detector noise due to low-dimensional confinement effect. Comparing to traditional optoelectronic III-V and other materials, self-assembled Ge quantum dots grown on Si substrates have a potential to be monolithically integrated with advanced Si-based technology. in this paper, we describe the growth of self-assembled, guided Ge quantum dots, and Ge quantum-dot superlattices on Si. For dot growth, issues such as growth conditions and their effects on the dot morphology are reviewed. Then vertical correlation and dot morphology evolution are addressed in relation to the critical thickness of Ge quantum-dot superlattices. In addition, we also discuss the quantum-dot p-i-p photodetectors (QDIPs) and n-i-n photocletectors for mid-infrared applications, and the quantum-dot p-i-n photocletectors for 1.3-1.55 mu m for communications applications. The wavelength of SiGe p-i-p QDIP can be tuned by the size as grown by various patterning methods. Photoresponse is demonstrated for an n-i-n structure in both the mid-infrared and far-infrared wavelength ranges. The p-i-n diodes exhibit low dark current and high quantum efficiency. The characteristics of fabricated light-emitting diode (LED) devices are also discussed, and room-temperature electroluminescence is observed for Ge quantum-dot LED. The results indicate that Ge dot materials are potentially applicable for mid-infrared (8-12 mu m) detectors as well as fiber-optic (1.3-1.55 mu m) communications.

Towards Controllable Growth of Self-Assembled Sige Single and Double Quantum Dot Nanostructures

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Mechanisms for directed self-assembly of heteroepitaxial Ge/Si quantum dots with deterministic placement and sub-23nm spacing on SiC nanotemplates

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Tailoring the Interfacial Structure of Colloidal "giant" Quantum Dots for Optoelectronic Applications.

Toward Precise Site-Controlling of Self-Assembled Ge Quantum Dots on Si Microdisks.

Advance in the Growth of Ordered Ge/Si Quantum Dots

Individually addressable double quantum dots formed with nanowire polytypes and identified by epitaxial markers

Competitive Growth of Ge Quantum Dots on a Si Micropillar with Pits for a Precisely Site-Controlled QDs/Microdisk System

Germanium Quantum-Dot Array with Self-Aligned Electrodes for Quantum Electronic Devices

Silicon-based low dimensional quantum structure - self-assembly grown germanium quantum dots

Growth Control of Ge/Si Quantum Dots

Machine-Learning-Assisted and Real-Time-Feedback-Controlled Growth of InAs/GaAs Quantum Dots

Fabrication of quantum dots in undoped Si/Si$_{0.8}$Ge$_{0.2}$ heterostructures using a single metal-gate layer

A Two-Stage Molecular Beam Epitaxial Growth Method to Fabricate Small and Uniform Ge Quantum Dots on Si(1 0 0)

Control of Growth of Self-Assembled Semiconductor Quantum Dots

Electronic properties of single Ge/Si quantum dot grown by ion beam sputtering deposition.

Ge/Si Self-Assembled Quantum Dots and Their Optoelectronic Device Applications

Fabrication And Characterization Of An Undoped Gaas/Algaas Quantum Dot Device

Self-Assembled Nisi Quantum-Dot Arrays On Epitaxial Si0.7ge0.3 On (001)Si