Abstract:Despite the superiority in quantum properties, self-assembled semiconductor quantum dots face challenges in terms of scalable device integration because of their random growth positions, originating from the Stranski-Krastanov growth mode. Even with existing site-controlled growth techniques, for example, nanohole or buried stressor concepts, a further lithography and etching step with high spatial alignment requirements isnecessary to accurately integrate QDs into the nanophotonic devices. Here, we report on the fabrication and characterization of strain-induced site-controlled microcavities where site-controlled quantum dots are positioned at the antinode of the optical mode field in a self-aligned manner without the need of any further nano-processing. We show that the Q-factor, mode volume, height, and the ellipticity of site-controlled microcavities can be tailored by the size of an integrated AlAs/Al2O3 buried stressor, with an opening ranging from 1 to 4 $\mu$m. Lasing signatures, including super-linear input-output response, linewidth narrowing near threshold, and gain competition above threshold, are observed for a 3.6-$\mu$m self-aligned cavity with a Q-factor of 18000. Furthermore, by waiving the rather complex lateral nano-structuring usually performed during the fabrication process of micropillar lasers and vertical-cavity surface emitting lasers, quasi-planar site-controlled cavities exhibit no detrimental effects of excitation power induced heating and thermal rollover. Our straightforward deterministic nanofabrication concept of high-quality quantum dot microcavities integrates seamlessly with the industrial-matured manufacturing process and the buried-stressor techniques, paving the way for exceptional scalability and straightforward manufacturing of high-\b{eta} microlasers and bright quantum light sources.

Toward Precise Site-Controlling of Self-Assembled Ge Quantum Dots on Si Microdisks.

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Competitive Growth of Ge Quantum Dots on a Si Micropillar with Pits for a Precisely Site-Controlled QDs/Microdisk System

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Sensitively Site‐Dependent Enhancement of Emissions from Ge Quantum Dots in SiGe Microdisks

Precisely ordered Ge quantum dots on a patterned Si microring for enhanced light-emission

An Array Of Sige Nanodisks With Ge Quantum Dots On Bulk Si Substrates Demonstrating A Unique Light-Matter Interaction Associated With Dual Coupling

Towards Controllable Growth of Self-Assembled Sige Single and Double Quantum Dot Nanostructures

Si-Based Microcavity Devices With Ge Quantum Dots

Germanium Quantum-Dot Array with Self-Aligned Electrodes for Quantum Electronic Devices

Ultrashallow Heavily Constrained Quantum Wells: the Cradle for Fully Electrically Controlled and Microwave Coupled Quantum Bits

Mechanisms for directed self-assembly of heteroepitaxial Ge/Si quantum dots with deterministic placement and sub-23nm spacing on SiC nanotemplates

Self-aligned photonic defect microcavities with site-controlled quantum dots

Study on crystal growth of Ge/Si quantum dots at different Ge deposition by using magnetron sputtering technique

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Optical properties of Ge/Si quantum dot superlattices

Unique Enhancement of the Whispering Gallery Mode in Hexagonal Microdisk Resonator Array with Embedded Ge Quantum Dots on Si

Controllable synthesis of Si-based GeSn quantum dots with room-temperature photoluminescence

Tailoring the Interfacial Structure of Colloidal "giant" Quantum Dots for Optoelectronic Applications.

Ordering of low-density Ge quantum dot on patterned Si substrate

Fabrication of quantum dots in undoped Si/Si$_{0.8}$Ge$_{0.2}$ heterostructures using a single metal-gate layer