Si-Based Microcavity Devices With Ge Quantum Dots

Jinsong Xia,Cheng Zeng,Yong Zhang,Yingjie Ma,Zuimin Jiang,Jinzhong Yu

DOI: https://doi.org/10.1364/cleo_si.2014.stu3h.5

2014-01-01

Abstract:Site-controlled single Ge quantum dot was grown on patterned silicon-on-insulator substrate. The single dot was then precisely embedded into a photonic crystal microcavity. Resonant photoluminescence was observed from the single Ge dot in the cavity.

What problem does this paper attempt to address?

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Zhang Lei,Ye Hui,Huangfu Yourui,Zhan Wenbo,Liu Xu

DOI: https://doi.org/10.3969/j.issn.1672-7126.2011.06.21

2011-01-01

Abstract:The high density germanium quantum dots(QDs) were deposited by vacuum evaporation in a molecular beam epitaxy(MBE) reactor,on the Si substrates covered with ultra thin SiO2buffer layers.The impacts of the growth conditions on microstructures and properties of the Ge QDs were studied with scanning electron microscopy,energy dispersive spectroscopy,reflection high energy electron diffraction,and Raman spectroscopy.The results show that the Ge quantum-dots with a density of 1011 cm-2 were fabricated,and that the annealing relaxed the residue strains in the quantum-dots.The growth mechanisms and advantages over Stranski Krastanow(S-K) technique were also tentatively discussed.
Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Dawei Di,Ivan Perez-Wurfl,Gavin Conibeer,Martin A. Green

DOI: https://doi.org/10.1117/12.859715

2010-01-01

Abstract:Si quantum dots in SiO(2)/Si(3)N(4) hybrid matrix on quartz substrates were fabricated by magnetron sputtering of alternating silicon rich oxide and Si(3)N(4) layers followed by different post-deposition anneals. X-ray diffraction results indicate that the average dimension of the Si QDs ranges from 1.6 to 5.2 nm. The size and crystallisation of the Si nanocrystals are dependent on a number of factors, including the annealing condition, the SRO thickness and the Si(3)N(4) barrier thickness, as evidenced in XRD and Raman measurements. In particular, thicker Si(3)N(4) barrier layers seem to be able to suppress the growth of Si nanocrystals more effectively. PL measurements indicate that the apparent bandgap of the samples investigated in this work is in the range 1.12-1.67 eV, which demonstrates the effect of quantum confinement. More interestingly, analysis of the PL data reveals that the PL peak energy does not only depend on the size of the nanocrystals, but also affected by other details of the nanocrystal formation. A simple core-shell model is constructed to illustrate our explanation. These findings offer a preliminary understanding of the nanocrystal growth and radiative recombination processes in this newly synthesized material.
Precisely ordered Ge quantum dots on a patterned Si microring for enhanced light-emission

Yi Li,Chengcong Cui,Jinwen Song,Qiang Liu,Shuai Yuan,Cheng Zeng,Jinsong Xia

DOI: https://doi.org/10.1088/1361-6528/ab9862

IF: 3.5

2020-07-06

Nanotechnology

Abstract:Semiconductor microcavities can greatly enhance the light-emission of embedded quantum dots (QDs). Here, a new route toward the microcavity-QD system by fabricating microcavities followed by growing ordered QDs on a patterned microresonator is proposed, which keeps QDs from being etched. Self-assembled Ge QDs prefer to form at the rims of Si microrings or microdisks. The Ge QDs on the pit- or groove-patterned microring resonator (MRR) show better size uniformity and position accuracy. These features are explained by the evolutions of surface morphology and surface chemical potential distribution. Sharp photoluminescence peaks in the telecommunication band with the quality factors in the range of 450–850 from groove-patterned MRR are observed at 295 K due to efficient overlap between Ge QDs and resonant modes. Our schemes shed light on the exactly site-controlled growth of QDs on micro- and nano-structures, which further facilitates the investigation of light-matter interactions.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Single Germanium Quantum Dot Embedded in Photonic Crystal Nanocavity for Light Emitter on Silicon Chip.

Cheng Zeng,Yingjie Ma,Yong Zhang,Danping Li,Zengzhi Huang,Yi Wang,Qingzhong Huang,Juntao Li,Zhenyang Zhong,Jinzhong Yu,Zuimin Jiang,Jinsong Xia

DOI: https://doi.org/10.1364/oe.23.022250

IF: 3.8

2015-01-01

Optics Express

Abstract:A silicon light emitter in telecom-band based on a single germanium quantum dot precisely embedded in a silicon photonic crystal nanocavity is fabricated by a scalable method. A sharp resonant luminescence peak is observed at 1498.8 nm, which is enhanced by more than three orders of magnitude. The Purcell factor for the fundamental resonant mode is estimated from enhancement factor and increased collection efficiency. The cavity modes coupled to the ground state and excited state emission of germanium quantum dot are identified in the luminescence spectrum. Our devices provide a CMOS-compatible way of developing silicon-based low-power consuming light emitters, and are promising for realizing on-chip single photon sources.
Competitive Growth of Ge Quantum Dots on a Si Micropillar with Pits for a Precisely Site-Controlled QDs/Microdisk System

Jia Yan,Zhifang Zhang,Ningning Zhang,Qiang Huang,Yan Zhan,Zuimin Jiang,Zhenyang Zhong

DOI: https://doi.org/10.3390/nano13162323

2023-01-01

Abstract:Semiconductor quantum dots (QDs)/microdisks promise a unique system for comprehensive studies on cavity quantum electrodynamics and great potential for on-chip integrated light sources. Here, we report on a strategy for precisely site-controlled Ge QDs in SiGe microdisks via self-assembly growth of QDs on a micropillar with deterministic pits and subsequent etching. The competitive growth of QDs in pits and at the periphery of the micropillar is disclosed. By adjusting the growth temperature and Ge deposition, as well as the pit profiles, QDs can exclusively grow in pits that are exactly located at the field antinodes of the corresponding cavity mode of the microdisk. The inherent mechanism of the mandatory addressability of QDs is revealed in terms of growth kinetics based on the non-uniform surface chemical potential around the top of the micropillar with pits. Our results demonstrate a promising approach to scalable and deterministic QDs/microdisks with strong light-matter interaction desired for fundamental research and technological applications.
Toward Precise Site-Controlling of Self-Assembled Ge Quantum Dots on Si Microdisks.

Shuguang Wang,Ningning Zhang,Peizong Chen,Liming Wang,Xinju Yang,Zuimin Jiang,Zhenyang Zhong

DOI: https://doi.org/10.1088/1361-6528/aac9f6

IF: 3.5

2018-01-01

Nanotechnology

Abstract:A feasible route is developed toward precise site-controlling of quantum dots (QDs) at the microdisk periphery, where most microdisk cavity modes are located. The preferential growth of self-assembled Ge QDs at the periphery of Si microdisks is discovered. Moreover, both the height and linear density of Ge QDs can be controlled by tuning the amount of deposited Ge and the microdisk size. The inherent mechanisms of these unique features are discussed, taking into account both the growth kinetics and thermodynamics. By growing Ge on the innovative Si microdisks with small protrusions at the disk periphery, the positioning of Ge QDs at the periphery can be exactly predetermined. Such a precise site-controlling of Ge QDs at the periphery enables the location of the QD right at the field antinodes of the cavity mode of the Si microdisk, thereby achieving spatial matching between QD and cavity mode. These results open a promising door to realize the semiconductor QD-microdisk systems with both spectral and spatial matching between QDs and microdisk cavity modes, which will be the promising candidates for exploring the fundamental features of cavity quantum electrodynamics and the innovative optoelectronic devices based on strong light-matter interaction.
Nanoheteroepitaxy of Ge and SiGe on Si: role of composition and capping on quantum dot photoluminescence

Diana Ryzhak,Johannes Aberl,Enrique Prado Navarrete,Lada Vukušić,Agnieszka Anna Corley-Wiciak,Oliver Skibitzki,Marvin Hartwig Zoellner,Markus Andreas Schubert,Michele Virgilio,Moritz Brehm,Giovanni Capellini,Davide Spirito

DOI: https://doi.org/10.1088/1361-6528/ad7f5f

IF: 3.5

2024-09-27

Nanotechnology

Abstract:We investigate the nanoheteroepitaxy of SiGe and Ge quantum dots (QDs) grown on nanotips substrates realized in Si(001) wafers. Due to the lattice strain compliance, enabled by the nanometric size of the tip and the limited dot/substrate interface area, which helps to reduce dot/substrate interdiffusion, the strain and SiGe composition in the QDs could be decoupled. This demonstrates a key advantage of the nanoheteroepitaxy over the Stranski-Krastanow growth mechanism. Nearly semi-spherical, defect-free, ∼100 nm wide SiGe QDs with different Ge contents were successfully grown on the nanotips with high selectivity and size uniformity. On the dots, thin dielectric capping layers were deposited, improving the optical properties by the passivation of surface states. Intense photoluminescence was measured from all samples investigated with emission energy, intensity, and spectral linewidth dependent on the SiGe composition of the QDs and the different capping layers. Radiative recombination occurs in the QDs, and its energy matches the results of band-structure calculations that consider strain compliance between the QD and the tip. The nanotips arrangement and the selective growth of QDs allow to studying the PL emission from only 3-4 QDs, demonstrating a bright emission and the possibility of selective addressing. These findings will support the design of optoelectronic devices based on CMOS-compatible emitters.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Silicon based photonic quantum dots

Kunji Chen,San Chen,Bo Qian,Xiangao Zhang,Wei Li,Jun Xu,XinFan Huang

DOI: https://doi.org/10.1109/GROUP4.2008.4638111

2008-01-01

Abstract:We use a patterned conformal deposition technique to fabricate Si-based 3D optical microcavities. The size-dependent confined photonic modes were observed when the size is reduced to 1.0 μm which is similar to the quantum effect of electronic states in semiconductor quantum dots. © 2008 IEEE.
An Array Of Sige Nanodisks With Ge Quantum Dots On Bulk Si Substrates Demonstrating A Unique Light-Matter Interaction Associated With Dual Coupling

Ningning Zhang,Shuguang Wang,Peizong Chen,Lijian Zhang,Kun Peng,Zuimin Jiang,Zhenyang Zhong

DOI: https://doi.org/10.1039/c9nr00798a

IF: 6.7

2019-01-01

Nanoscale

Abstract:Si-Based microdisks with Ge quantum dots (QDs) have been of great interest due to their potential as the desired light source for monolithic optical-electronic integrated circuits (MOEICs), as well as in the studies of cavity quantum electrodynamics (CQED). Here, we report on unique SiGe nanodisk arrays with embedded Ge QDs directly realized on bulk Si substrates. Their superior optoelectronic properties are demonstrated by remarkably enhanced photoluminescence due to the coupling between QD emissions and cavity modes of the nanodisk, even though the size of the nanodisk is much smaller than the wavelengths of cavity modes. Moreover, spectral shifts of cavity modes and an intensity modulation related to the interference of in-phase emissions from QDs in the nanodisk array are observed due to alternative coupling between nanodisks. A hybridized mode, originating from the spectral overlap between the anapole mode of individual nanodisks and the guided mode of periodic nanodisks, results in strong luminescence even at room temperature. Our results shed new light on the fundamental physics of CQED in nanodisk arrays with embedded QDs. Given their superior optoelectronic properties, the feasibility of carrier injection and thermal dissipation through the Si pedestal, the presented SiGe nanodisks with embedded Ge QDs will have great potential for application in innovative optoelectronic devices, particularly as the light source for MOEICs.
Self-aligned photonic defect microcavities with site-controlled quantum dots

C.-W. Shih,I. Limame,C. C. Palekar,A. Koulas-Simos,A. Kaganskiy,P. Klenovský,S. Reitzenstein

2023-11-25

Abstract:Despite the superiority in quantum properties, self-assembled semiconductor quantum dots face challenges in terms of scalable device integration because of their random growth positions, originating from the Stranski-Krastanov growth mode. Even with existing site-controlled growth techniques, for example, nanohole or buried stressor concepts, a further lithography and etching step with high spatial alignment requirements isnecessary to accurately integrate QDs into the nanophotonic devices. Here, we report on the fabrication and characterization of strain-induced site-controlled microcavities where site-controlled quantum dots are positioned at the antinode of the optical mode field in a self-aligned manner without the need of any further nano-processing. We show that the Q-factor, mode volume, height, and the ellipticity of site-controlled microcavities can be tailored by the size of an integrated AlAs/Al2O3 buried stressor, with an opening ranging from 1 to 4 $\mu$m. Lasing signatures, including super-linear input-output response, linewidth narrowing near threshold, and gain competition above threshold, are observed for a 3.6-$\mu$m self-aligned cavity with a Q-factor of 18000. Furthermore, by waiving the rather complex lateral nano-structuring usually performed during the fabrication process of micropillar lasers and vertical-cavity surface emitting lasers, quasi-planar site-controlled cavities exhibit no detrimental effects of excitation power induced heating and thermal rollover. Our straightforward deterministic nanofabrication concept of high-quality quantum dot microcavities integrates seamlessly with the industrial-matured manufacturing process and the buried-stressor techniques, paving the way for exceptional scalability and straightforward manufacturing of high-\b{eta} microlasers and bright quantum light sources.

Mesoscale and Nanoscale Physics,Optics
Tunable Quantum Dot Lasers Grown Directly on Silicon

Yating Wan,Sen Zhang,Justin C. Norman,M. J. Kennedy,William He,Songtao Liu,Chao Xiang,Chen Shang,Jian-Jun He,Arthur C. Gossard,John E. Bowers

DOI: https://doi.org/10.1364/optica.6.001394

IF: 10.4

2019-01-01

Optica

Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.
Sensitively Site‐Dependent Enhancement of Emissions from Ge Quantum Dots in SiGe Microdisks

Ningning Zhang,Peizong Chen,Jia Yan,Kun Peng,Liming Wang,Huiyong Hu,Zuimin Jiang,Zhenyang Zhong

DOI: https://doi.org/10.1002/adpr.202200100

2022-01-01

Advanced Photonics Research

Abstract:Herein, the unique emission properties of Ge quantum dots (QDs) SiGe microdisk system are reported on Si substrates. Two types of microdisks embedded with random QDs and radial site‐controlled QDs are realized by top–down and bottom–up methods, respectively. Photoluminescence results demonstrate that the maximum enhancement factor (EF) of emissions from radial site‐controlled QDs is ≈5.2 times of that from random QDs in microdisks. Moreover, the EF dramatically depends on the site of QD in a microdisk. For a single QD in a microdisk, the difference of EF can be more than five orders due to radial site‐dependent Purcell effect. For multiple QDs in a microdisk, both the azimuthal site and the number of QDs also substantially affect EF due to the interference effect of QDs’ emissions coupling into the cavity modes of microdisks. These unique features disclose the critical effect of the spatial matching between the QD site and the cavity mode on light–matter interactions in a microdisk. In addition, the microdisk via the bottom–up method can efficiently suppress nonradiative losses at the sidewall of microdisk. A promising strategy to QDs’ microdisk system is provided in the results, which promises strong coupling between QDs and the cavity modes and the realization of innovative light sources.
Fabrication of quantum dots in undoped Si/Si$_{0.8}$Ge$_{0.2}$ heterostructures using a single metal-gate layer

T. M. Lu,J. K. Gamble,R. P. Muller,E. Nielsen,D. Bethke,G. A. Ten Eyck,T. Pluym,J. R. Wendt,J. Dominguez,M. P. Lilly,M. S. Carroll,M. C. Wanke

DOI: https://doi.org/10.1063/1.4961889

2016-08-29

Abstract:Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for \revEdit{their} potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with Ge concentration close to 30\%. Here we report the fabrication and low-temperature characterization of quantum dots in Si/Si$_{0.8}$Ge$_{0.2}$ heterostructures using only one metal-gate layer. We find that the threshold voltage of a channel narrower than 1 $\mu$m increases as the width decreases. The higher threshold can be attributed to the combination of quantum confinement and disorder. We also find that the lower Ge ratio used here leads to a narrower operational gate bias range. The higher threshold combined with the limited gate bias range constrains the device design of lithographic quantum dots. We incorporate such considerations in our device design and demonstrate a quantum dot that can be tuned from a single dot to a double dot. The device uses only a single metal-gate layer, greatly simplifying device design and fabrication.

Mesoscale and Nanoscale Physics
Optical properties of Ge/Si quantum dot superlattices

Zheng Yang,Yi Shi,Jianlin Liu,Bo Yan,Rong Zhang,Youdou Zheng,Kanglong Wang

DOI: https://doi.org/10.1016/j.matlet.2004.08.016

IF: 3

2004-01-01

Materials Letters

Abstract:Self-assembled Ge/Si quantum dot (QD) superlattices (SLs) were grown by a solid-source molecular beam epitaxy (MBE) system with the Stranski-Kranstanov (SK) growth mode. Atomic force microscope (AFM) and transmission electron microscope (TEM) characterizations of the samples were presented. Photoluminescence (PL) and Raman scattering measurements were carried out. The temperature dependence of the PL intensity has been reported and fitted by the Arrhenius and Berthelot type function. Some valuable parameters were obtained through the fitted curves, one of which was closely related to the dimension and effective mass of electron of the QDs.
Mcrostructure and Optical Properties of Ge(Si) Dots Grown on Si

J Wan,S Tong,ZM Jiang,G Jin,YH Luo,JL Liu,XZ Liao,J Zou,KL Wang

DOI: https://doi.org/10.1117/12.460805

2002-01-01

Abstract:The microstructural, luminescence properties and photoresponse of multilayer Ge(Si) quantum dots grown on Si (100) substrates are studied. The strain and composition of the dots are studied by synchrotron-radiation x-ray. The dots are found to be Si0.58Ge0.42 alloy with 50% strain relaxed in average. The photoluminescence from the dots is observed up to room temperature. The thermal stability of the quantum dots is studied. P-i-n structures are grown with Ge(Si) dots embedded in the i-layer for photodetection investigation. The photoresponse wavelength of Ge(Si) dots covers the wavelength range of 1.3-1.52 mm and relatively high external quantum efficiency is obtained.
Electroluminescence from silicon-based photonic crystal microcavities with PbSe quantum dots.

Junseok Heo,Ting Zhu,Chunfeng Zhang,Jian Xu,Pallab Bhattacharya

DOI: https://doi.org/10.1364/OL.35.000547

IF: 3.6

2010-01-01

Optics Letters

Abstract:The characteristics of electrically injected silicon-based photonic crystal microcavities with PbSe quantum dots are described. The device includes suitable electron and hole transporting layers and contact layers. The measured electroluminescence at room temperature exhibits an enhanced spontaneous emission. The resonant mode is observed at lambda=1669 nm with a spectral linewidth of 4 nm, corresponding to a cavity Q factor of approximately 420.
Circularly Organized Quantum Dot Nanostructures of Ge on Si Substrates

Qijia Cai,Peixuan Chen,Zhenyang Zhong,Zuimin Jiang,Fang Lu,Zhenghua An

DOI: https://doi.org/10.1088/0268-1242/24/9/095005

IF: 2.048

2009-01-01

Semiconductor Science and Technology

Abstract:A novel circularly arranged structure of germanium quantum dots has been fabricated by combining techniques including electron beam lithography, wet etching and molecular beam epitaxy. It was observed that both pattern and growth parameters affect the morphology of the quantum dot molecules. Meanwhile, the oxidation mask plays a vital role in the formation of circularly organized quantum dots. The experimental results demonstrate the possibilities of investigating the properties of quantum dot molecules as well as single quantum dots.
Ge Quantum Dot Infrared Photo-Detector

Wang Minsheng,Wei Rongshan,Deng Ning,Chen Peiyi

DOI: https://doi.org/10.1109/iwjt.2004.1306847

2004-01-01

Abstract:In our experiments, vertical aligned superlattices of multiple self-assembled Ge island layers separated by Si spacer layers on Si(100) substrates have been grown by ultra high vacuum chemical vapor deposition system (UHV/CVD). The photoluminescence of material was excited with 500nm laser and measured at 10 K, the PL peaks representing Ge islands and Si wetting layers were observed at 825 and 1010 mev respectively. Based on this material, samples of quantum dot infrared photo-detectors (QDIP), with p-i-n junctions, were fabricated. The responsivity of the detectors was measured with various semiconductor light-emitting diodes and semiconductor lasers. At room temperature and at -3V applied bias, for samples with 245 × 245 μm2 large window and dark current Id∼10-9A, the maximum photocurrent responsivity of 0.52 A/W at 774 nm was found, and 0.043mA/W at 1.31 μm. Higher responsivities can be obtained with a waveguide geometry and optimization of the whole structure, such as thickness of layers and type of doping.
Formation of Coupled Three-Dimensional Gesi Quantum Dot Crystals

Y. J. Ma,Z. Zhong,Q. Lv,T. Zhou,X. J. Yang,Y. L. Fan,Y. Q. Wu,J. Zou,Z. M. Jiang

DOI: https://doi.org/10.1063/1.3702883

IF: 4

2012-01-01

Applied Physics Letters

Abstract:Coupled three-dimensional GeSi quantum dot crystals (QDCs) are realized by multilayer growth of quantum dots (QDs) on patterned SOI (001) substrates. Photoluminescence spectra of these QDCs show non-phonon (NP) recombination and its transverse-optical (TO) phonon replica of excitons in QDs. With increasing excitation power, peak energies of both the NP and TO peaks remain nearly constant and the width of the TO peak decreases. These anomalous features of the PL peaks are attributed to miniband formation due to strong coupling of the holes and the emergence of quasioptical phonon modes due to periodic scatters in ordered GeSi QDs.
Photoluminescence of Ge quantum dots buried in silicon

DongZhi Hu,Haijun Zhu,Zuimin Jiang,Daming Huang,Xiangjiu Zhang,Xun Wang

1997-01-01

Abstract:Ge quantum dots were grown by self-organizing growth method on Si(001) substrate at a temperature of 500��C, its photoluminescence spectrum was observed after annealing at 700��C for 20 min. Atomic force microscopy and cross-sectional transmission electron microscopy were used to observe the size and density of the quantum dots. Raman spectra were measured for the samples annealed at different temperatures in order to observe the inter-diffusion between Si and Ge atoms.

Si-Based Microcavity Devices With Ge Quantum Dots

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Precisely ordered Ge quantum dots on a patterned Si microring for enhanced light-emission

Single Germanium Quantum Dot Embedded in Photonic Crystal Nanocavity for Light Emitter on Silicon Chip.

Competitive Growth of Ge Quantum Dots on a Si Micropillar with Pits for a Precisely Site-Controlled QDs/Microdisk System

Toward Precise Site-Controlling of Self-Assembled Ge Quantum Dots on Si Microdisks.

Nanoheteroepitaxy of Ge and SiGe on Si: role of composition and capping on quantum dot photoluminescence

Silicon based photonic quantum dots

An Array Of Sige Nanodisks With Ge Quantum Dots On Bulk Si Substrates Demonstrating A Unique Light-Matter Interaction Associated With Dual Coupling

Self-aligned photonic defect microcavities with site-controlled quantum dots

Tunable Quantum Dot Lasers Grown Directly on Silicon

Sensitively Site‐Dependent Enhancement of Emissions from Ge Quantum Dots in SiGe Microdisks

Fabrication of quantum dots in undoped Si/Si$_{0.8}$Ge$_{0.2}$ heterostructures using a single metal-gate layer

Optical properties of Ge/Si quantum dot superlattices

Mcrostructure and Optical Properties of Ge(Si) Dots Grown on Si

Electroluminescence from silicon-based photonic crystal microcavities with PbSe quantum dots.

Circularly Organized Quantum Dot Nanostructures of Ge on Si Substrates

Ge Quantum Dot Infrared Photo-Detector

Formation of Coupled Three-Dimensional Gesi Quantum Dot Crystals

Photoluminescence of Ge quantum dots buried in silicon