Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

Silicon based photonic quantum dots

Photonic Quantum Dots Based on Bragg Reflectors Grown by Conformal Deposition on Patterned Substrates

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Size Dependence of Optical Eigenmodes in Photonic Quantum Dots Prepared by Conformal Deposition Method

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Fabrication of Optical Cavities with Femtosecond Laser Pulses

Si-Based Microcavity Devices With Ge Quantum Dots

Si-based Photonic Quantum Dots with the Self-Similar Distributed Bragg Reflectors

Tunable Quantum Dot Lasers Grown Directly on Silicon

Research Progress in Application of Silicon Quantum Dots in Optoelectronic Devices

Silicon Photonic Devices for Scalable Quantum Information Applications

High-Q and High-Order Side-Coupled Air-Mode Nanobeam Photonic Crystal Cavities in Silicon

Self-aligned photonic defect microcavities with site-controlled quantum dots

Quantum Size-Dependent Luminescence and Nonlinear Optical Properties of Silicon Quantum Dots/sio2 Multilayer

Size-Dependent Optical Absorption of Silicon Nanocrystals Embedded in Sio2/Si3n4 Hybrid Matrix

An Array Of Sige Nanodisks With Ge Quantum Dots On Bulk Si Substrates Demonstrating A Unique Light-Matter Interaction Associated With Dual Coupling

Coupling of quantum-dot light emission with a three-dimensional photonic-crystal nanocavity

Emission cells with quantum dots on silicon chip prepared by using fs pulsed laser

On-Chip Silicon-Based Active Photonic Molecules by Complete Photonic Bandgap Light Confinement

Advanced Optoelectronic Devices Based on Si Quantum Dots/Si Nanowires Hetero-structures

Hybrid integration of deterministic quantum dots-based single-photon sources with CMOS-compatible silicon carbide photonics