Abstract:Modern nanotechnology offers routes to create new artificial materials, widening the functionality of devices in physics, chemistry, and biology. Templated self-organization has been recognized as a possible route to achieve exact positioning of quantum dots to create quantum dot arrays, molecules, and crystals. Here we employ extreme ultraviolet interference lithography (EUV-IL) at a wavelength of lambda = 13.5 nm for fast, large-area exposure of templates with perfect periodicity. Si(001) substrates have been patterned with two-dimensional hole arrays using EUV-IL and reactive ion etching. On these substrates, three-dimensionally ordered SiGe quantum dot crystals with the so far smallest quantum dot sizes and periods both in lateral and vertical directions have been grown by molecular beam epitaxy. X-ray diffractometry from a sample volume corresponding to about 3.6 x 10(7) dots and atomic force microscopy (AFM) reveal an up to now unmatched structural perfection of the quantum dot crystal and a narrow quantum dot size distribution. Intense interband photoluminescence has been observed up to room temperature, indicating a low defect density in the three-dimensional (3D) SiGe quantum dot crystals. Using the Ge concentration and dot shapes determined by X-ray and AFM measurements as input parameters for 3D band structure calculations, an excellent quantitative agreement between measured and calculated PL energies is obtained. The calculations show that the band structure of the 3D ordered quantum dot crystal is significantly modified by the artificial periodicity. A calculation of the variation of the eigenenergies based on the statistical variation in the dot dimensions as determined experimentally (+/-10% in linear dimensions) shows that the calculated electronic coupling between neighboring dots is not destroyed due to the quantum dot size variations. Thus, not only from a structural point of view but also with respect to the band structure, the 3D ordered quantum dots can be regarded as artificial crystal.

Photonic Quantum Dots Based on Bragg Reflectors Grown by Conformal Deposition on Patterned Substrates

Si-based Photonic Quantum Dots with the Self-Similar Distributed Bragg Reflectors

Silicon based photonic quantum dots

Size Dependence of Optical Eigenmodes in Photonic Quantum Dots Prepared by Conformal Deposition Method

Fabrication of Optical Cavities with Femtosecond Laser Pulses

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Conformal Coverage for Two-Dimensional Arrays of Microcavites with Quasi-Three Dimensional Confinement by Distributed Bragg Reflectors

High-Q and High-Order Side-Coupled Air-Mode Nanobeam Photonic Crystal Cavities in Silicon

Self-aligned photonic defect microcavities with site-controlled quantum dots

Self-assembling of Submicrometer Three-Dimensional Photonic Crystals in Concave Microzones Etched on Silicon Substrates

Si-Based Microcavity Devices With Ge Quantum Dots

A three-dimensional optical photonic crystal with designed point defects

Coupling of quantum-dot light emission with a three-dimensional photonic-crystal nanocavity

Three-dimensional Photonic-Crystal Cavity with an Embedded Quantum Dot As a Nonclassical Light Emitter.

Optical Fabrication and Characterisation of SU-8 Disk Photonic Waveguide Heterostructure Cavities.

Three dimensional photonic crystal micro-cavity for single photon source

Single quantum dot selection and tailor-made photonic device integration using nanoscale focus pinspot

Three-dimensional Si/Ge quantum dot crystals

Miniaturization of Multicolor Quantum Dots Lasing Based on 2D Constrained Resonator

On-chip three-dimensional high-Q microcavities fabricated by femtosecond laser direct writing