Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

Quantum Size-Dependent Luminescence and Nonlinear Optical Properties of Silicon Quantum Dots/sio2 Multilayer

Enhancing Quantum Dots for Bioimaging using Advanced Surface Chemistry and Advanced Optical Microscopy: Application to Silicon Quantum Dots (SiQDs)

Colloidal Silicon Quantum Dots: from Preparation to the Modification of Self-Assembled Monolayers for Bioimaging and Sensing Applications

Synthesis, Optical Properties And Theoretical Modelling Of Discrete Emitting States In Doped Silicon Nanocrystals For Bioimaging

Size-Dependent Optical Absorption of Silicon Nanocrystals Embedded in Sio2/Si3n4 Hybrid Matrix

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Interface State-Related Linear and Nonlinear Optical Properties of Nanocrystalline Si/SiO2 Multilayers

Luminescence Mechanism of Ligand-induced Interface States in Silicon Quantum Dots

Optimum Quantum Yield of the Light Emission from 2 to 10 Nm Hydrosilylated Silicon Quantum Dots

The luminescence mechanism of ligand-induced interface states in silicon quantum dots

Tunable Quantum Dot Lasers Grown Directly on Silicon

The Role of Silicon Oxide Layers in Luminescence of Ensembles of Silicon Quantum Dots

Research Progress in Application of Silicon Quantum Dots in Optoelectronic Devices

Optical Transition in Discrete Levels of Si Quantum Dots

Light-emitting Diodes Based on Colloidal Silicon Quantum Dots

Enhancement of Intrinsic Optical Transitions in Silicon Nanocrystals by State Localization

Luminescence Mechanism in Hydrogenated Silicon Quantum Dots with a Single Oxygen Ligand

Time-resolved and time-integrated photoluminescence analysis of state filling and quantum confinement of silicon quantum dots

Fabrication and Luminescence Properties of Si Quantum Dots Based on Si-Rich Sinx/N-Rich Siny Multilayer

The Structures and Properties of Si/SiO2 Core/shell Quantum Dots Studied by Density-Functional Tight-Binding Calculations

Localized State-Induced Enhanced Intrinsic Phonon-Free Optical Transition in Silicon Nanocrystals