Abstract:In this study, we developed very simple and ULSI (ultra large scale integration) compatible fabrication processes for group-IV (Si 1 –x Ge x and Si) semiconductor quantum dots (QDs) to apply hybrid ULSIs with photonic and electron devices, using double Ge + /Si + hot-ion implantation into a SiO 2 layer with larger bandgap E G and the post-furnace annealing. We successfully demonstrated the near-infrared (IR) photoluminescence (PL) from Si 1 –x Ge x -QDs. Transmission electron microscopy observations of single-crystallized Si 1 –x Ge x -QDs revealed that the diameter and the QD density were 3.6 ± 0.9 nm and (2.6 ± 0.4) × 10 12 cm −2 , respectively. In addition, Ge atoms were detected in the Si 1 –x Ge x -QDs by the energy dispersive x-ray spectroscopy analysis, and the Ge fraction of Si 1– x Ge x -QDs was varied from 0.06 to 0.26 by changing the Ge ion dose. The increase in the PL intensity by forming gas annealing was attributed to the dangling-bond reduction by the H-atom termination method. The PL spectrum of Si 1 –x Ge x -QDs was fitted by PL components of two QD structures containing Si 1 –x Ge x and Si materials. The PL intensity and PL-peak photon energy of Si 1 –x Ge x -QDs strongly depended on the Ge fraction. The Si 1 –x Ge x -QDs achieved the maximum PL intensity at x ≈ 0.13. High PL-peak photon energy (∼1.31 eV) of Si 1 –x Ge x -QDs is attributed to the quantum confinement effect of carriers in QDs. Consequently, group-IV semiconductor QDs including Si 1 –x Ge x , Si, SiC, and C, through the simple hot-ion implantation into the SiO 2 layer, exhibited a wide range of PL emissions from the near-IR to ultraviolet regions.

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