Interface State-Related Linear and Nonlinear Optical Properties of Nanocrystalline Si/SiO2 Multilayers

Pei Zhang,Xiaowei Zhang,Peng Lu,Jun Xu,Xin Xu,Wei Li,Kunji Chen
DOI: https://doi.org/10.1016/j.apsusc.2013.11.128
IF: 6.7
2014-01-01
Applied Surface Science
Abstract:Nanocrystalline Si (nc-Si)/SiO2 multilayers with dot size of 2.5 nm were prepared and their microstructures were characterized by cross-sectional transmission electron microscopy and Raman spectroscopy. A broad photoluminescence band centered at 870 nm was observed which can be ascribed to the recombination of photo-excited carriers via luminescence centers at the interfacial region of nc-Si/SiO2. Meanwhile, the nonlinear optical response of the multilayers under excitation of two laser pulse durations had been investigated through Z-scan technique, the pumping lasers were picosecond (lambda = 1.06 mu m, t(p) = 25 ps) and femtosecond (lambda = 800 nm, t(p) = 50 fs) lasers, respectively. Under picosecond laser pumping, the saturation absorption was observed while the reverse saturation absorption happened under the femtosecond excitation. The model based on the interface state-assisted process was proposed to explain the observed optical nonlinearities. (C) 2013 Elsevier B.V. All rights reserved.
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