Abstract:Light-matter interactions in low-dimensional quantum-confined structures can dominate the optical properties of the materials and lead to optoelectronic applications. In anisotropic layered silicon diphosphide (SiP 2 ) crystal, the embedded quasi-one-dimensional (1D) phosphorus-phosphorus (P—P) chains directly result in an unconventional quasi-1D excitonic state, and a special phonon mode vibrating along the P—P chains, establishing a unique 1D quantum-confined system. Alloying SiP 2 with the homologous element serves as an effective way to study the properties of these excitons and phonons associated with the quasi-1D P—P chains, as well as the strong interaction between these quasiparticles. However, the experimental observation and the related optical spectral understanding of SiP 2 with isoelectronic dopants remain elusive. Herein, with the photoluminescence and Raman spectroscopy measurements, we demonstrate the redshift of the confined excitonic peak and the stiffening of the phonon vibration mode B 1g 3 of a series of Si(P 1− x As x ) 2 alloys with increasing arsenic (As) compositions. This anomalous stiffening of is attributed to the selective substitution of As atoms for P atoms within the P—P chains, which is confirmed via our scanning transmission electron microscopy investigation. Such optical spectra evolutions with selective substitution pave a new way to understand the 1D quantum confinement in semiconductors, offering opportunities to explore quasi-1D characteristics in SiP 2 and the resulting photonic device application.

Phosphorus Doping Effect on Linear and Nonlinear Optical Properties of Si/SiO 2 Multilayers

Nonlinear Optical Absorption and Ultrafast Optical Response of Un-Doped and P-doped Nanocrystalline Si/SiO2 Multilayers

Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

Phosphorus Doping in Si Nanocrystals/SiO2 Multilayers and Light Emission with Wavelength Compatible for Optical Telecommunication.

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Modulation of Surface States by Phosphorus to Improve the Optical Properties of Ultra-Small Si Nanocrystals

Size-dependent Phosphorus Doping Effect in Nanocrystalline-Si-based Multilayers

Doping silicon nanocrystals with boron and phosphorus

Properties of silicon nanocrystals with boron and phosphorus doping fabricated via silicon rich oxide and silicon dioxide bilayers

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Atomic-scale study on the dopant distribution in phosphorus and boron-doped Si nanocrystals/SiO2 multilayers

Comparative study on the localized surface plasmon resonance of boron- and phosphorus-doped silicon nanocrystals.

The Phosphorus and Boron Co-Doping Behaviors at Nanoscale in Si Nanocrystals/Sio2 Multilayers

Doping Si Nanocrystals Embedded in Sio2 with P in the Framework of Density Functional Theory

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

Doping Effect in Si Nanocrystals/SiO2 Multilayers

Doped Silicon Nanocrystals From Organic Dopant Precursor By A Sicl4-Based High Frequency Nonthermal Plasma

Ab Initio Study On The Effect Of Structural Relaxation On The Electronic And Optical Properties Of P-Doped Si Nanocrystals

Lightly boron and phosphorus co-doped silicon nanocrystals

Selective Substitution Induced Anomalous Phonon Stiffening Within Quasi-One-dimensional P—P Chains in SiP 2

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2