Abstract:Effects of boron and phosphorus doping on the structural, electrical, and optical properties of silicon nanocrystals in superlattice thin films were investigated. Silicon nanocrystals were fabricated via magnetron sputtering of stoichiometric silicon rich oxide and silicon dioxide bilayers followed by high temperature annealing at 1100 degrees Celsius. The characterization techniques used include: high-resolution transmission electron microscopy with energy filtering, grazing incidence x-ray diffraction, Raman, photoluminescence, and photothermal deflection spectroscopy, as well as electrical measurements. Results showed that phosphorus doping causes the loss of the bilayer structure and an increase in the average size of the silicon nanocrystals due to softening of the silicon dioxide matrix during post-sputter annealing. The result was a decrease in quantum confinement and a redshift in photoluminescence spectrum with an absorption profile similar to crystalline silicon. The undoped (intrinsic) sample maintained its bilayer structure and displayed stronger quantum confinement with higher photoluminescence peak energy and higher absorption coefficient. In-between, the boron doped sample was more similar structurally to the intrinsic sample, although merging between bilayers resulted in an extensive silicon nanocrystalline network. Optically, it displayed different effects due to photoluminescence quenching and free carrier absorption. Finally, both doped samples exhibited a decrease in electrical resistivity.

Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

Modulation of Surface States by Phosphorus to Improve the Optical Properties of Ultra-Small Si Nanocrystals

Doping silicon nanocrystals with boron and phosphorus

Phosphorus Doping Effect on Linear and Nonlinear Optical Properties of Si/SiO 2 Multilayers

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Phosphorus Doping in Si Nanocrystals/SiO2 Multilayers and Light Emission with Wavelength Compatible for Optical Telecommunication.

Properties of silicon nanocrystals with boron and phosphorus doping fabricated via silicon rich oxide and silicon dioxide bilayers

Phosphorus-doped polycrystalline silicon passivating contacts via spin-on doping

Size-dependent Phosphorus Doping Effect in Nanocrystalline-Si-based Multilayers

Doped Silicon Nanocrystals From Organic Dopant Precursor By A Sicl4-Based High Frequency Nonthermal Plasma

Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Effects of Heavy Phosphorus-Doping on Mechanical Properties of Czochralski Silicon

Nonlinear Optical Absorption and Ultrafast Optical Response of Un-Doped and P-doped Nanocrystalline Si/SiO2 Multilayers

Enhanced carrier mobility in Si nano-crystals via nanoscale phosphorus doping

Structures, Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

Doping Si Nanocrystals Embedded in Sio2 with P in the Framework of Density Functional Theory

Doped Silicon Nanoparticles Synthesized by Nonthermal Plasma

Doping Efficiency, Dopant Location, and Oxidation of Si Nanocrystals

Doping Effect in Si Nanocrystals/SiO2 Multilayers

Effect of diffusion doping-induced defects on shunt resistance affecting Si-nanowire solar cell performance