Abstract:The Poly-Si/SiO x stack passivation structure incorporate doped polycrystalline silicon (Poly-Si) and tunneling silicon oxide (SiO x ) thin films allows for majority-carrier transport as well as block minority carriers and suppress recombination, and thus enable very high efficiency. Up to now the Poly-Si/SiO x stack passivation have been a widespread research topic for photovoltaic researchers, but most of the works are only focused on n-type doped structures and the rear side polished surface of the solar cells. In order to apply the Poly-Si/SiO x stack structure to the front textured surface and p + emitter region to obtain high-efficiency double-sided passivated contact solar cells and Si-based tandem cells in the future. In this work, passivation properties of Poly-Si/SiO x stack capped with SiN x :H layer are discussed based on different crystalline silicon surface morphologies, dopant types, doping profiles and thickness of Poly-Si layer. With proper doping process control, an excellent implied open-circuit voltage ( iVoc ) of 706 mV with a saturation current density ( J 0 ) value of 12 f A/cm 2 has been obtained for the boron-doped Poly-Si/SiO x stack capped with SiN x :H based on the textured surface, and an iVoc of 736 mV with a J 0 value of 2 f A/cm 2 has been acquired for the phosphorus-doped Poly-Si/SiO x stack capped with SiN x :H based on the acid polished surface. The results show that the polished surface and thinner Poly-Si layer are helpful for passivation. For the doped Poly-Si/SiO x stack structure, the doping source will penetrate the tunneling SiO x layer into the silicon bulk to form a certain penetration depth on the surface of the silicon substrate. In order to acquire the high iVoc (low J 0 ) value, a penetration depth of around 160 nm is needed to the phosphorus-doped Poly-Si/SiO x stack, while a penetration depth of less than 25 nm is required for boron-doped Poly-Si/SiO x stack. In addition, there is a linear relationship between the R sheet value and the reciprocal value of the Poly-Si (n + ) layer thickness.

Phosphorus-doped polycrystalline silicon passivating contacts via spin-on doping

Poly-Si passivating contacts prepared via phosphorus spin-on-doping: A comparison between different silicon deposition methods

Solution-Doped Polysilicon Passivating Contacts for Silicon Solar Cells

Boron Spin-On Doping for Poly-Si/SiO x Passivating Contacts

Influence of PECVD Deposition Power and Pressure on Phosphorus-Doped Polysilicon Passivating Contacts

Phosphorus-diffused polysilicon contacts for solar cells

Influence of PECVD deposition temperature on phosphorus doped poly-silicon passivating contacts

Application of Phosphorus‐Doped Polysilicon‐Based Full‐Area Passivating Contact on the Front Textured Surface of P‐type Silicon

Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

Current status and challenges for hole-selective poly-silicon based passivating contacts

Impurity Gettering by Boron‐ and Phosphorus‐Doped Polysilicon Passivating Contacts for High‐Efficiency Multicrystalline Silicon Solar Cells

Optimizing Phosphorus-Doped Polysilicon in TOPCon Structures Using Silicon Oxide Layers to Improve Silicon Solar Cell Performance

Bi-layer in-situ phosphorus doped poly-Si films by PECVD for blistering-free high-efficiency industrial TOPCon solar cells

The Passivation Characteristics of Poly-Si/SiOx Stack for High-Efficiency Silicon Solar Cells

Development of Phosphorus-Doped Nanoscale Poly-Si Passivating Contacts via Inkjet Printing for Application in Silicon Solar Cells

Polysilicon Passivating Contacts for Silicon Solar Cells: Interface Passivation and Carrier Transport Mechanism

Optimum Hydrogen Injection in Phosphorus-Doped Polysilicon Passivating Contacts

Enhancing the Selectivity and Transparency of the Electron Contact in Silicon Heterojunction Solar Cells by Phosphorus Catalytic Doping

A silicon oxide-based highly transparent passivating contact for crystalline silicon solar cells approaching efficiencies of 23%

Polysilicon in situ phosphorus doping control over large concentration range using low temperature, low pressure chemical vapour deposition growth process

Direct Observation of the Impurity Gettering Layers in Polysilicon-Based Passivating Contacts for Silicon Solar Cells