Boron Spin-On Doping for Poly-Si/SiO x Passivating Contacts

Zetao Ding,Thien N. Truong,Hieu T. Nguyen,Di Yan,Xinyu Zhang,Jie Yang,Zhao Wang,Peiting Zheng,Yimao Wan,Daniel Macdonald,Josua Stuckelberger
DOI: https://doi.org/10.1021/acsaem.1c00550
IF: 6.4
2021-04-28
ACS Applied Energy Materials
Abstract:Herein, we fabricate and characterize p-type passivating contacts based on industrial intrinsic polycrystalline silicon (poly-Si)/thermal-SiO<sub><i>x</i></sub>/n-type crystalline Si (c-Si) substrates using a spin-on doping technique. The impacts of drive-in temperature, drive-in dwell time, and intrinsic poly-Si thickness on the boron-doped poly-Si passivating contacts are investigated. First, the contact passivation quality improves with an increasing thermal budget (&lt;950 °C) but then decreases again for excessive thermal annealing (&gt;950 °C). Second, the thickness of the intrinsic poly-Si film shows only a little impact on the performance. After a hydrogenation treatment by depositing an AlO<sub><i>x</i></sub>/SiN<sub><i>x</i></sub> stack and subsequent annealing in forming gas, the optimized poly-Si passivating contacts show an implied open-circuit voltage (<i>iV</i><sub>oc</sub>) &gt; 720 mV, together with a contact resistivity (ρ<sub>c</sub>) below 5 mΩ cm<sup>2</sup>. These results demonstrate that boron spin-on doping is a promising alternative to the conventional BBr<sub>3</sub> thermal diffusion for the fabrication of p-type poly-Si passivating contacts.This article has not yet been cited by other publications.
materials science, multidisciplinary,chemistry, physical,energy & fuels
What problem does this paper attempt to address?
The paper primarily explores the method of preparing p-type polysilicon/silicon dioxide passivated contacts using spin-on doping technology and investigates the impact of different conditions on contact performance. Specifically, the paper addresses the following key issues: 1. **Preparation Method**: Using industrial-grade polysilicon (poly-Si)/thermally oxidized silicon dioxide (SiOx)/n-type monocrystalline silicon (c-Si) substrates, p-type passivated contacts are prepared using spin-on doping technology. The study examines the effects of doping temperature, doping time, and polysilicon film thickness. 2. **Optimization Parameters**: The optimal doping temperature is found to be 950°C, and the optimal doping time is 60 minutes. Under these conditions, after hydrogenation treatment, the passivated contact exhibits an open-circuit voltage (iVoc) exceeding 720mV and a contact resistivity (ρc) below 5mΩcm². 3. **Performance Influencing Factors**: The research indicates that as the thermal budget increases to 950°C, the quality of contact passivation improves; however, when the temperature further increases, the quality deteriorates. The thickness of the polysilicon film has a minor impact on performance. In summary, the paper aims to demonstrate boron spin-on doping as a novel and promising method for preparing high-performance polysilicon passivated contacts, and experimental results validate the effectiveness and superiority of this method.