Abstract:The Poly-Si/SiO x stack passivation structure incorporate doped polycrystalline silicon (Poly-Si) and tunneling silicon oxide (SiO x ) thin films allows for majority-carrier transport as well as block minority carriers and suppress recombination, and thus enable very high efficiency. Up to now the Poly-Si/SiO x stack passivation have been a widespread research topic for photovoltaic researchers, but most of the works are only focused on n-type doped structures and the rear side polished surface of the solar cells. In order to apply the Poly-Si/SiO x stack structure to the front textured surface and p + emitter region to obtain high-efficiency double-sided passivated contact solar cells and Si-based tandem cells in the future. In this work, passivation properties of Poly-Si/SiO x stack capped with SiN x :H layer are discussed based on different crystalline silicon surface morphologies, dopant types, doping profiles and thickness of Poly-Si layer. With proper doping process control, an excellent implied open-circuit voltage ( iVoc ) of 706 mV with a saturation current density ( J 0 ) value of 12 f A/cm 2 has been obtained for the boron-doped Poly-Si/SiO x stack capped with SiN x :H based on the textured surface, and an iVoc of 736 mV with a J 0 value of 2 f A/cm 2 has been acquired for the phosphorus-doped Poly-Si/SiO x stack capped with SiN x :H based on the acid polished surface. The results show that the polished surface and thinner Poly-Si layer are helpful for passivation. For the doped Poly-Si/SiO x stack structure, the doping source will penetrate the tunneling SiO x layer into the silicon bulk to form a certain penetration depth on the surface of the silicon substrate. In order to acquire the high iVoc (low J 0 ) value, a penetration depth of around 160 nm is needed to the phosphorus-doped Poly-Si/SiO x stack, while a penetration depth of less than 25 nm is required for boron-doped Poly-Si/SiO x stack. In addition, there is a linear relationship between the R sheet value and the reciprocal value of the Poly-Si (n + ) layer thickness.

On the passivation mechanism of poly-silicon and thin silicon oxide on crystal silicon wafers

On the passivation mechanism of poly-silicon and thin silicon oxide on crystal silicon wafers

A Study of the Post-hydrogenation Passivation Mechanism of Crystallized Poly-Si Films

The Mechanism of Hydrogen Plasma Passivation for Poly-Crystalline Silicon Thin Film

Detailed Study of SiOxNy:H/Si Interface Properties for High Quality Surface Passivation of Crystalline Silicon

Passivation Roles Of Hydrogen Plasma Radicals On Crystallized Poly-Si

Long-term stability study of the passivation quality of polysilicon-based passivation layers for silicon solar cells

Microstructure Evolution and Passivation Quality of Hydrogenated Amorphous Silicon Oxide（a-Sio X :H） On〈100〉- and 〈111〉-Orientated C-Si Wafers

Improved interface passivation by optimizing a polysilicon film under different hydrogen dilution in N-type TOPCon silicon solar cells

Optimization and Operation Mechanism Analysis of Cz-Si Wafer Passivation Byα-Siox∶h Film

Comparison of different types of interfacial oxides on hole-selective p+-poly-Si passivated contacts for high-efficiency c-Si solar cells

Passivation and Dissociation of P B-Type Defects at A-Sio2/si Interface*

Unraveling the Passivation Mechanisms of C-Si/Siox/Poly-Si Contacts

Optimum Hydrogen Injection in Phosphorus-Doped Polysilicon Passivating Contacts

Polysilicon Passivating Contacts for Silicon Solar Cells: Interface Passivation and Carrier Transport Mechanism

The Passivation Characteristics of Poly-Si/SiOx Stack for High-Efficiency Silicon Solar Cells

A Study of Optimization of Hydrogen Plasma Treatment on Poly-Si

The mechanism of hydrogen plasma passivation for poly-Si thin film

Study of the correlation between hydrogenated amorphous silicon microstructure and crystalline silicon surface passivation in heterojunction solar cells

Improved amorphous/crystalline silicon interface passivation with two-step intrinsic layers

A-Siox:H Passivation Layers for Cz-Si Wafer Deposited by Hot Wire Chemical Vapor Deposition