Abstract:Surface passivation of n-type Crystalline Silicon wafer using thin dielectric films is an important and major factor in improving photovoltaic performance of HIT solar cells. In this study, Numerical simulation was carried out by using AFORS-HET simulation software in which energy band diagram with and without surface passivation (a-Si:H(i)) was investigated and the highest conduction band offset obtained on n type c-Si wafer is 0.85 eV which is comparatively higher than p-type c-Si wafer which was reported between 0.1 and 0.15 eV. Performance of HIT solar cell with passivation layer is simulated and obtained efficiency of 12.9% by incorporating actual conditions to compare with experimentally obtained data. It has been understood that applying an effective dielectric passivation of silicon surface resulted with high open circuit voltage (Voc) and low surface recombination lead to an increase of cell efficiency by 1.1% (from 11.8 to 12.9%). Also, the simulated results shows that to obtain good conversion efficiency Defect density of interface (Dit) should be lower than 1x1011 cm−2eV−1.Validation of the simulation results is done by conducting PECVD experiments for optimizing the amorphous silicon passivation to a layer thickness down to 15 nm. HIT Solar cells have been developed, using the optimum layer of passivation, and their performance have been studied. An improvement in the minority charge carrier lifetime of ~53 µs (from 215 to 268 μs) and on the other hand reduction in the surface recombination velocity of ~ 12.9 cm/s (from 65.11 cm/s down to 52.23 cm/s) has been achieved through passivation which effectively increased the open circuit voltage (Voc) from 0.690 to 0.705 V. In this preliminary study, a conversion efficiency of 11.3% of heterojunction with intrinsic thin layer (HIT) solar cell on 10 mm × 10 mm n-c-Si wafer has been obtained.

Real-time monitoring of surface passivation of crystalline silicon during growth of amorphous and epitaxial silicon layer

Demonstration of Excellent Crystalline Silicon Surface Passivation (S < 1.27 cm/s) by High‐Rate DC‐Sputtered Hydrogenated Amorphous Silicon

Amorphous/Crystalline Silicon Interface Stability: Correlation between Infrared Spectroscopy and Electronic Passivation Properties

Excellent crystalline silicon surface passivation by amorphous silicon irrespective of the technique used for chemical vapor deposition

Detailed Study of SiOxNy:H/Si Interface Properties for High Quality Surface Passivation of Crystalline Silicon

High-Pressure Water-Vapor Annealing for Enhancement of A-Si:H Film Passivation of Silicon Surface

Surface Passivation Studies of n-type Crystalline Silicon for HIT Solar Cells

Effective Passivation of Black Silicon Surfaces via Plasma‐Enhanced Chemical Vapor Deposition Grown Conformal Hydrogenated Amorphous Silicon Layer

On the passivation mechanism of poly-silicon and thin silicon oxide on crystal silicon wafers

Passivation of textured crystalline silicon with small pyramids by silicon nitride films formed by catalytic chemical vapor deposition and phosphorus catalytic impurity doping

Novel silicon surface passivation by porous silicon combined with an ultrathin Al2O3 film

Investigation of dual intrinsic a-Si:H films for crystalline silicon surface passivation by spectroscopic ellipsometry: application in silicon heterojunction solar cells

Dry Passivation Process for Silicon Heterojunction Solar Cells Using Hydrogen Plasma Treatment Followed by In Situ a-Si:H Deposition

Numerical Simulation Study for Analysis of Hydrogenated Amorphous Silicon/Crystalline Silicon Heterostructure by Reactive Molecular Dynamics Method

In situ Photoluminescence Study of Plasma Effects on Passivation of Crystalline Silicon Coated with Aluminum Oxide

Bulk Defects and Hydrogenation Kinetics in Crystalline Silicon Solar Cells With Fired Passivating Contacts

Crystalline Si Surface Passivation with Nafion for Bulk Defects Detection with Electron Paramagnetic Resonance

Surface Recrystallization Model of Fully Amorphized C3H5-Molecular-Ion-Implanted Silicon Substrate

Significant Improvement of Passivation Performance by Two-Step Preparation of Amorphous Silicon Passivation Layers in Silicon Heterojunction Solar Cells*

Intrinsic layer modification in silicon heterojunctions: Balancing transport and surface passivation