Abstract:Surface passivation of n-type Crystalline Silicon wafer using thin dielectric films is an important and major factor in improving photovoltaic performance of HIT solar cells. In this study, Numerical simulation was carried out by using AFORS-HET simulation software in which energy band diagram with and without surface passivation (a-Si:H(i)) was investigated and the highest conduction band offset obtained on n type c-Si wafer is 0.85 eV which is comparatively higher than p-type c-Si wafer which was reported between 0.1 and 0.15 eV. Performance of HIT solar cell with passivation layer is simulated and obtained efficiency of 12.9% by incorporating actual conditions to compare with experimentally obtained data. It has been understood that applying an effective dielectric passivation of silicon surface resulted with high open circuit voltage (Voc) and low surface recombination lead to an increase of cell efficiency by 1.1% (from 11.8 to 12.9%). Also, the simulated results shows that to obtain good conversion efficiency Defect density of interface (Dit) should be lower than 1x1011 cm−2eV−1.Validation of the simulation results is done by conducting PECVD experiments for optimizing the amorphous silicon passivation to a layer thickness down to 15 nm. HIT Solar cells have been developed, using the optimum layer of passivation, and their performance have been studied. An improvement in the minority charge carrier lifetime of ~53 µs (from 215 to 268 μs) and on the other hand reduction in the surface recombination velocity of ~ 12.9 cm/s (from 65.11 cm/s down to 52.23 cm/s) has been achieved through passivation which effectively increased the open circuit voltage (Voc) from 0.690 to 0.705 V. In this preliminary study, a conversion efficiency of 11.3% of heterojunction with intrinsic thin layer (HIT) solar cell on 10 mm × 10 mm n-c-Si wafer has been obtained.

Investigation of dual intrinsic a-Si:H films for crystalline silicon surface passivation by spectroscopic ellipsometry: application in silicon heterojunction solar cells

The microstructure of underdense hydrogenated amorphous silicon and its application to silicon heterojunction solar cells

Intrinsic layer modification in silicon heterojunctions: Balancing transport and surface passivation

Surface Passivation Studies of n-type Crystalline Silicon for HIT Solar Cells

Development of high conducting phosphorous doped nanocrystalline thin silicon films for silicon heterojunction solar cells application

Significant Improvement of Passivation Performance by Two-Step Preparation of Amorphous Silicon Passivation Layers in Silicon Heterojunction Solar Cells*

Amorphous/Crystalline Silicon Interface Stability: Correlation between Infrared Spectroscopy and Electronic Passivation Properties

Thin heterojunction a-Si:H photovoltaic cell design with no doped a-Si:H layers

Beyond 25% efficient crystalline silicon heterojunction solar cells with hydrogenated amorphous silicon oxide stacked passivation layers for rear emitter

Development of Highly Stable Hydrogenated Amorphous Silicon Films for Application in Solar Cells

Review—Process Research on Intrinsic Passivation Layer for Heterojunction Solar Cells

Light-activated surface passivation for more efficient silicon heterojunction solar cells: Origin, physics and stability

Improving the performance of high-efficiency silicon heterojunction solar cells through low-temperature deposition of an i-a-Si:H anti-epitaxial buffer layer

Real-time monitoring of surface passivation of crystalline silicon during growth of amorphous and epitaxial silicon layer

Simulation of the Efficiency of a-SiC:H/a-Si:H Tandem Multilayer Solar Cells

Demonstration of Excellent Crystalline Silicon Surface Passivation (S < 1.27 cm/s) by High‐Rate DC‐Sputtered Hydrogenated Amorphous Silicon

Numerical Simulation Study for Analysis of Hydrogenated Amorphous Silicon/Crystalline Silicon Heterostructure by Reactive Molecular Dynamics Method

Interdigitated back contact silicon heterojunction solar cell and the effect of front surface passivation

Dry Passivation Process for Silicon Heterojunction Solar Cells Using Hydrogen Plasma Treatment Followed by In Situ a-Si:H Deposition

Influence of intrinsic amorphous silicon passivation layer on the dark-state stability of SHJ cells

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells