Abstract:High‐performance silicon heterojunction (SHJ) solar cells use carrier‐selective contact structures based on hydrogentated amorphous Si (a‐Si:H) to maximize collection of photogenerated carriers. The high open circuit voltages observed experimentally in SHJ cells require that the carrier‐selective contacts provide selectivity and passivation. However, a microscopic understanding of the dynamics of carrier transport through the a‐Si layer is currently lacking. In this paper, we explicitly simulate the transport of holes across the a‐Si:H(i) layer using a novel kinetic Monte Carlo approach. The hole‐selective contact structure investigated in this paper uses p‐type doped a‐Si:H(p) and intrinsic a‐Si:H(i) on an n‐type crystalline silicon wafer, where the selectivity is provided by the a‐Si:H(p) and the passivation is provided by the a‐Si:H(i). However, in addition to the passivation provided by the a‐Si:H(i), this layer also creates a potential barrier to the collection of photogenerated holes. There have been experimental studies in the literature that have suggested that multi‐phonon processes are the main transport mechanism that assists in the transport of holes across the intrinsic a‐Si:H barrier. Simulations presented here show that multi‐phonon injection of holes into the a‐Si:H(i) layer is the rate limiting step for transport across the a‐Si:H(i) layer. Our results indicate that multi‐phonon transport is strongly dependent on the electric field at the a‐Si:H(i)/c‐Si heterointerface as well. Transport simulations presented in this paper are consistent with experimental findings that multi‐phonon processes limit transport across the a‐Si:H(i) layer and are responsible for photocurrent suppression at the a‐Si:H(i)/c‐Si heterointerface when these processes are slower than the associated incident hole flux due to photo‐excitation. Using a novel kinetic Monte Carlo approach, we explicitly simulate transport of holes across the a‐Si:H(i) layer in a hole selective contact for a silicon heterojunction solar cell. Our results indicate that multi‐phonon transport is strongly dependent on the electric field at the a‐Si:H(i)/c‐Si heterointerface. Transport simulations presented in this paper are consistent with experimental findings that multi‐phonon processes limit transport across the a‐Si:H(i) layer and are responsible for photocurrent suppression at the a‐Si:H(i)/c‐Si heterointerface

Numerical Simulation Study for Analysis of Hydrogenated Amorphous Silicon/Crystalline Silicon Heterostructure by Reactive Molecular Dynamics Method

Amorphous/Crystalline Silicon Interface Stability: Correlation between Infrared Spectroscopy and Electronic Passivation Properties

The microstructure of underdense hydrogenated amorphous silicon and its application to silicon heterojunction solar cells

Intrinsic layer modification in silicon heterojunctions: Balancing transport and surface passivation

High-Pressure Water-Vapor Annealing for Enhancement of A-Si:H Film Passivation of Silicon Surface

Physical criteria for the interface passivation layer in hydrogenated amorphous/crystalline silicon heterojunction solar cell

Evaluation Of Microstructures And Carrier Transport Behaviors During The Transition Process From Amorphous To Nanocrystalline Silicon Thin Films

Study on Crystallization Mechanism of Hydrogenated Silicon Film

Investigation of dual intrinsic a-Si:H films for crystalline silicon surface passivation by spectroscopic ellipsometry: application in silicon heterojunction solar cells

Dynamical, Vibrational, Electronic and Optical Properties in c-Si:H with Bond-Centered-Hydrogen, H Dimers and Other H Complexes

Bulk Defects and Hydrogenation Kinetics in Crystalline Silicon Solar Cells With Fired Passivating Contacts

Effect of Hydrogen Radical Exposure on the Interfacial and Bulk Structure of A-Si:H/a-sinx:h Multilayer Films

Real-time monitoring of surface passivation of crystalline silicon during growth of amorphous and epitaxial silicon layer

Modeling and simulation of heterojunction crystalline silicon solar cells with a nanocrystalline cubic silicon carbide emitter

Dry Passivation Process for Silicon Heterojunction Solar Cells Using Hydrogen Plasma Treatment Followed by In Situ a-Si:H Deposition

Numerical Design of Ultrathin Hydrogenated Amorphous Silicon-Based Solar Cell

A study on the improvement of amorphous silicon/crystalline silicon heterojunction solar cells by microwave processing

Simulation of a high-efficiency silicon-based heterojunction solar cell

Balance of efficiency and stability of silicon heterojunction solar cells

Modeling of transport in carrier‐selective contacts in silicon heterojunction solar cells

Thermally stimulated H emission and diffusion in hydrogenated amorphous silicon