Abstract:High temperature passivating contacts for c-Si based solar cells are intensively studied because of their potential in boosting solar cell efficiency while being compatible with industrial processes at high temperatures. In this work, the hydrogenation mechanism of fired passivating contacts (FPC) based on c-Si/SiOx/nc-SiCx(p) stacks was investigated. More specifically, the correlation between passivation and local re-distribution of hydrogen resulting from the application of different types of interfacial oxides (SiOx) and post-hydrogenation processes was analyzed. To do so, the applied processing sequence was interrupted at different stages in order to characterize the samples. To assess the hydrogen content, deuterium was introduced (alongside/instead of hydrogen) and secondary ion mass spectroscopy (SIMS) was used for depth profiling. Combining these results with lifetime measurements, the key role played by hydrogen in the passivation of defects at the c-Si/SiOx interface is discussed. The SIMS profiles show that hydrogen almost completely effuses out of the SiCx(p) during firing, but can be re-introduced by hydrogenation via forming gas anneal (FGA) or by release from a hydrogen containing layer such as SiNx:H. A pile-up of H at the c-Si/SiOx interface was observed and identified as a key element in the FPC's passivation mechanism. Moreover, the samples hydrogenated with SiNx:H exhibited higher H content compared to those treated by FGA, resulting in higher iVOC values. Further investigations revealed that the doping of the SiCx layer does not affect the amount of interfacial defects passivated by the hydrogenation process presented in this work. Eventually, an effect of the oxide's nature on passivation quality is evidenced. iVOC values of up to 706 mV and 720 mV were reached with FPC test structures using chemical and UV-O3 tunneling oxides, respectively, and up to 739 mV using a reference passivation sample featuring a ~25 nm thick thermal oxide.

Dry Passivation Process for Silicon Heterojunction Solar Cells Using Hydrogen Plasma Treatment Followed by In Situ a-Si:H Deposition

Controllable A-Si:H/c-si Interface Passivation by Residual SiH4 Molecules in H-2 Plasma

Role of Hydrogen Plasma Pretreatment in Improving Passivation of the Silicon Surface for Solar Cells Applications

Improved Amorphous/crystalline Silicon Interface Passivation for Silicon Heterojunction Solar Cells by Hot-Wire Atomic Hydrogen During Doped A-Si:H Deposition

Significant Improvement of Passivation Performance by Two-Step Preparation of Amorphous Silicon Passivation Layers in Silicon Heterojunction Solar Cells*

Investigation of positive roles of hydrogen plasma treatment for interface passivation based on silicon heterojunction solar cells

A Method to Slow Down the Etching of Hydrogen Plasma Pretreatment and Improve Passivation in Silicon Heterojunction Solar Cells

Effective Interface Pretreatment For Amorphous-Crystalline Silicon Heterojunction Solar Cells

Bulk Defects and Hydrogenation Kinetics in Crystalline Silicon Solar Cells With Fired Passivating Contacts

Impact of Surface Treatments on the Passivation Effect for N-Type Crystalline Silicon in Heterojunction Solar Cells

Demonstration of Excellent Crystalline Silicon Surface Passivation (S < 1.27 cm/s) by High‐Rate DC‐Sputtered Hydrogenated Amorphous Silicon

High-Pressure Water-Vapor Annealing for Enhancement of A-Si:H Film Passivation of Silicon Surface

Si Surface Passivation By Siox:H Films Deposited By A Low-Frequency Icp For Solar Cell Applications

Effective Passivation of Black Silicon Surfaces via Plasma‐Enhanced Chemical Vapor Deposition Grown Conformal Hydrogenated Amorphous Silicon Layer

Enhancement of Electrical Properties of Nanostructured Polysilicon Layers Through Hydrogen Passivation

Electronic Passivation of Crystalline Silicon Surfaces Using Spatial‐Atomic‐Layer‐Deposited HfO2 Films and HfO2/SiNx Stacks

Enhancement of C-Si Surface Passivation Quality by Increasing in Situ H2 Flow Rate

Study of the correlation between hydrogenated amorphous silicon microstructure and crystalline silicon surface passivation in heterojunction solar cells

Chemically Active Plasmas for Surface Passivation of Si Photovoltaics

Effective Hydrogenation Strategies to Boost Efficiency over 20% for Crystalline Silicon Solar Cell with Al2O3/Cu2O Passivating Contact

Analysis of hydrogen distribution and migration in fired passivating contacts (FPC)