Improved Surface Passivation by Wet Texturing, Ozone‐Based Cleaning, and Plasma‐Enhanced Chemical Vapor Deposition Processes for High‐Efficiency Silicon Heterojunction Solar Cells

Anna Belen Morales-Vilches,Er-Chien Wang,Tobias Henschel,Matthias Kubicki,Alexandros Cruz,Stefan Janke,Lars Korte,Rutger Schlatmann,Bernd Stannowski
DOI: https://doi.org/10.1002/pssa.201900518
2019-12-17
physica status solidi (a)
Abstract:<p>Silicon heterojunction (SHJ) solar cells rely on excellent surface passivation of the crystalline wafer. This paper reports on the development of wet chemical processes varying the texturing and optimizations of the final clean processes for CZ‐Si wafers used in SHJ solar cells. Three different additives were used to modify both the pyramid size and the texture homogeneity on the wafers. As an alternative to standard RCA sequence, ozonized DI water based procedures were used to clean the silicon surfaces, reducing process time and the amount of chemicals to obtain the same cleaning quality. Additionally, two different amorphous silicon (a‐Si:H) passivation stacks are discussed in this paper demonstrating an improvement of the open circuit voltage, <i>V</i><sub><i>oc</i></sub>, by 15 mV. Implementing these wet chemistry improvements combined with optimized process conditions for the passivating a‐Si:H layers deposited by plasma enhanced chemical vapor deposition (PECVD), allowed us to obtain high efficiency devices both in small and full‐area solar cells. On 6‐inch full‐area solar cells (215.3 cm<sup>2</sup> aperture area) open circuit voltages, fill factors and efficiency values of 738 mV, 81.4% and 23.2% were obtained, respectively; for 4 cm<sup>2</sup> cell size the best obtained values in equivalent solar cells were 741 mV, 80.6% and 23.2%.</p><p>This article is protected by copyright. All rights reserved.</p>
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