Edge passivation of shingled poly-Si/SiOx passivated contacts solar cells

Franck Dhainaut,Raoul Dabadie,Benoit Martel,Thibaut Desrues,Mickaël Albaric,Olivier Palais,Sébastien Dubois,Samuel Harrison
DOI: https://doi.org/10.1051/epjpv/2023013
2023-07-07
EPJ Photovoltaics
Abstract:This work aims at the full recovery of efficiency losses induced by shingling double-side poly-Si/SiO x passivated contacts crystalline silicon solar cells. It focuses on thermally-activated Aluminium Oxide (AlO x) layers elaborated by thermal Atomic Layer Deposition (ALD) to passivate the edges of shingled cells cut by using the innovative "45° tilt squaring approach". The whole procedure featuring high-temperature AlO x annealing led to very low cut-related performance losses. Indeed, the efficiency and FF of the passivated shingled cells surpassed the values obtained for the as-cut shingles by 0.5% abs and 2.6% abs, respectively. Approaches for further improvements are also discussed, particularly to overcome the short-circuit current density decrease observed for passivated shingles.
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