Abstract:Given the increasing interest in searching for high‐quality low‐cost passivating contacts for c‐Si solar cells, the fundamentals and development status of wide‐bandgap metal‐compound‐based passivating contacts are reviewed and the challenges and potential solutions in developing highly transparent passivating contacts with excellent carrier selectivity are discussed. Based on in‐depth data analysis and simulations, the improvement strategies for metal‐compound‐based passivating contacts design and device integration are pointed out. Advanced doped‐silicon‐layer‐based passivating contacts have boosted the power conversion efficiency (PCE) of single‐junction crystalline silicon (c‐Si) solar cells to over 26%. However, the inevitable parasitic light absorption of the doped silicon layers impedes further PCE improvement. To this end, alternative passivating contacts based on wide‐bandgap metal compounds (so‐called dopant‐free passivating contacts (DFPCs)) have attracted great attention, thanks to their potential merits in terms of parasitic absorption loss, ease‐of‐deposition, and cost. Intensive research activity has surrounded this topic with significant progress made in recent years. Various electron‐selective and hole‐selective contacts based on metal compounds have been successfully developed, and a champion PCE of 23.5% has been achieved for a c‐Si solar cell with a MoOx‐based hole‐selective contact. In this work, the fundamentals and development status of DFPCs are reviewed and the challenges and potential solutions for enhancing the carrier selectivity of DFPCs are discussed. Based on comprehensive and in‐depth analysis and simulations, the improvement strategies and future prospects for DFPCs design and device implementation are pointed out. By tuning the carrier concentration of the metal compound and the work function of the capping transparent electrode, high PCEs over 26% can be achieved for c‐Si solar cells with DFPCs.

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